Arkka Bhattacharyya

Generating author description...

All published works

Action	Title	Year	Authors
+ PDF Chat	NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination	2024	Yizheng Liu Saurav Roy Carl Peterson Arkka Bhattacharyya Sriram Krishnamoorthy
+ PDF Chat	Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$	2024	Saurav Roy Arkka Bhattacharyya Carl Peterson Sriram Krishnamoorthy
+ PDF Chat	Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3	2024	Nathan D. Rock Haobo Yang Brian A. Eisner A.D. Levin Arkka Bhattacharyya Sriram Krishnamoorthy Praneeth Ranga Michael Walker Larry Wang Ming Kit Cheng
+ PDF Chat	Ultra-Wide Band Gap Ga<sub>2</sub>O<sub>3</sub>-on-SiC MOSFETs	2023	Yiwen Song Arkka Bhattacharyya Anwarul Karim Daniel Shoemaker Hsien‐Lien Huang Saurav Roy Craig D. McGray Jacob H. Leach Jinwoo Hwang Sriram Krishnamoorthy
+	Over 6 $μ$m thick MOCVD-grown Low-Background Carrier Density (10$^{15}$ cm$^{-3}$) High-Mobility (010) $β$-Ga$_2$O$_3$ Drift Layers	2023	Arkka Bhattacharyya Carl R. Peterson Kittamet Chanchaiworawit Saurav Roy Yizheng Liu Steve Rebollo Sriram Krishnamoorthy
+ PDF Chat	Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga<sub>2</sub>O<sub>3</sub> and β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Films	2022	Fikadu Alema Carl Peterson Arkka Bhattacharyya Saurav Roy Sriram Krishnamoorthy A. Osinsky
+ PDF Chat	High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup>	2022	Arkka Bhattacharyya Saurav Roy Praneeth Ranga Carl Peterson Sriram Krishnamoorthy
+ PDF Chat	4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup>	2022	Arkka Bhattacharyya Shivam Sharma Fikadu Alema Praneeth Ranga Saurav Roy Carl Peterson Geroge Seryogin A. Osinsky Uttam Singisetti Sriram Krishnamoorthy
+	Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films	2022	Fikadu Alema Carl R. Peterson Arkka Bhattacharyya Saurav Roy Sriram Krishnamoorthy A. Osinsky
+	Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs	2022	Yiwen Song Arkka Bhattacharyya Anwarul Karim Daniel P. Shoemaker Hsien‐Lien Huang Saurav Roy Craig D. McGray Jacob H. Leach Jinwoo Hwang Sriram Krishnamoorthy
+	Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers	2022	Arkka Bhattacharyya Carl R. Peterson Takeki Itoh Saurav Roy Jacqueline Cooke Steve Rebollo Praneeth Ranga Berardi Sensale‐Rodriguez Sriram Krishnamoorthy
+ PDF Chat	Spalling‐Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer	2021	Eric W. Blanton Michael J. Motala Timothy A. Prusnick Albert Hilton Jeff L. Brown Arkka Bhattacharyya Sriram Krishnamoorthy Kevin Leedy Nicholas R. Glavin Michael Snure
+ PDF Chat	In Situ Dielectric Al <sub>2</sub> O <sub>3</sub> /β‐Ga <sub>2</sub> O <sub>3</sub> Interfaces Grown Using Metal–Organic Chemical Vapor Deposition	2021	Saurav Roy Adrian Chmielewski Arkka Bhattacharyya Praneeth Ranga Rujun Sun Michael A. Scarpulla Nasim Alem Sriram Krishnamoorthy
+ PDF Chat	Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	2021	Arkka Bhattacharyya Praneeth Ranga Saurav Roy Carl Peterson Fikadu Alema G. A. Seryogin A. Osinsky Sriram Krishnamoorthy
+	High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup>	2021	Saurav Roy Arkka Bhattacharyya Praneeth Ranga Heather Splawn Jacob H. Leach Sriram Krishnamoorthy
+	High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$	2021	Saurav Roy Arkka Bhattacharyya Praneeth Ranga Heather Splawn Jacob H. Leach Sriram Krishnamoorthy
+ PDF Chat	High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$	2021	Saurav Roy Arkka Bhattacharyya Praneeth Ranga Heather Splawn Jacob H. Leach Sriram Krishnamoorthy
+	N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium	2021	Praneeth Ranga Arkka Bhattacharyya Luisa Whittaker‐Brooks Michael A. Scarpulla Sriram Krishnamoorthy
+	In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition	2021	Saurav Roy Adrian Chmielewski Arkka Bhattacharyya Praneeth Ranga Rujun Sun Michael A. Scarpulla Nasim Alem Sriram Krishnamoorthy
+	130 mA/mm $\beta$-Ga$_2$O$_3$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts	2021	Arkka Bhattacharyya Saurav Roy Praneeth Ranga Daniel Shoemaker Yiwen Song James Spencer Lundh Sukwon Choi Sriram Krishnamoorthy
+	Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer	2021	Eric W. Blanton Michael J. Motala Timothy A. Prusnick Albert Hilton Jeff L. Brown Arkka Bhattacharyya Sriram Krishnamoorthy Kevin Leedy Nicholas R. Glavin Michael Snure
+	130 mA/mm $β$-Ga$_2$O$_3$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts	2021	Arkka Bhattacharyya Saurav Roy Praneeth Ranga Daniel P. Shoemaker Yiwen Song James Spencer Lundh Suk‐Won Choi Sriram Krishnamoorthy
+ PDF Chat	Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al <sub>x</sub> Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterostructure channels	2020	Praneeth Ranga Arkka Bhattacharyya Adrian Chmielewski Saurav Roy Rujun Sun Michael A. Scarpulla Nasim Alem Sriram Krishnamoorthy
+ PDF Chat	Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped <b> <i>β</i> </b>-Ga2O3 crystals	2020	Rujun Sun Yu Kee Ooi Arkka Bhattacharyya Muad Saleh Sriram Krishnamoorthy Kelvin G. Lynn Michael A. Scarpulla
+ PDF Chat	Delta-doped <b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> films with narrow FWHM grown by metalorganic vapor-phase epitaxy	2020	Praneeth Ranga Arkka Bhattacharyya Adrian Chmielewski Saurav Roy Nasim Alem Sriram Krishnamoorthy
+ PDF Chat	Design of a β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown	2020	Saurav Roy Arkka Bhattacharyya Sriram Krishnamoorthy
+	Low temperature homoepitaxy of (010) <b> <i>β</i> </b>-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window	2020	Arkka Bhattacharyya Praneeth Ranga Saurav Roy Jonathan Ogle Luisa Whittaker‐Brooks Sriram Krishnamoorthy
+ PDF Chat	Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence	2020	Rujun Sun Yu Kee Ooi Praneeth Ranga Arkka Bhattacharyya Sriram Krishnamoorthy Michael A. Scarpulla
+	Growth and Characterization of Low Sheet Resistance Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels	2020	Praneeth Ranga Arkka Bhattacharyya Adrian Chmielewski Saurav Roy Rujun Sun Michael A. Scarpulla Nasim Alem Sriram Krishnamoorthy
+ PDF Chat	Delta-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films and <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterostructures grown by metalorganic vapor-phase epitaxy	2020	Praneeth Ranga Arkka Bhattacharyya Ashwin K. Rishinaramangalam Yu Kee Ooi Michael A. Scarpulla Daniel Feezell Sriram Krishnamoorthy
+ PDF Chat	Degenerate doping in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> single crystals through Hf-doping	2020	Muad Saleh Joel B. Varley Jani Jesenovec Arkka Bhattacharyya Sriram Krishnamoorthy Santosh K. Swain Kelvin G. Lynn
+	Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures	2020	Saurav Roy Arkka Bhattacharyya Sriram Krishnamoorthy
+	Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence	2020	Rujun Sun Yu Kee Ooi Praneeth Ranga Arkka Bhattacharyya Sriram Krishnamoorthy Michael A. Scarpulla
+ PDF Chat	Schottky Barrier Height Engineering in<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>Using SiO<sub>2</sub>Interlayer Dielectric	2020	Arkka Bhattacharyya Praneeth Ranga Muad Saleh Saurav Roy Michael A. Scarpulla Kelvin G. Lynn Sriram Krishnamoorthy
+	Si-doped <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by metalorganic vapor-phase epitaxy	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy
+ PDF Chat	MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy

Common Coauthors

Coauthor	Papers Together
Sriram Krishnamoorthy	36
Praneeth Ranga	23
Saurav Roy	20
Michael A. Scarpulla	11
Rujun Sun	7
Carl Peterson	6
Jacob H. Leach	5
Nasim Alem	5
Saurav Roy	5
Adrian Chmielewski	5
Yiwen Song	4
Fikadu Alema	4
A. Osinsky	4
Yu Kee Ooi	4
Kelvin G. Lynn	3
Daniel Feezell	3
Carl R. Peterson	3
Ashwin K. Rishinaramangalam	3
Muad Saleh	3
Joel B. Varley	3
Heather Splawn	3
Kevin Leedy	2
Albert Hilton	2
Yizheng Liu	2
Suk‐Won Choi	2
Daniel P. Shoemaker	2
Michael Snure	2
Jinwoo Hwang	2
Daniel Shoemaker	2
Nicholas R. Glavin	2
James Spencer Lundh	2
Michael J. Motala	2
Timothy A. Prusnick	2
Craig D. McGray	2
Steve Rebollo	2
Eric W. Blanton	2
Hsien‐Lien Huang	2
Sukwon Choi	2
Luisa Whittaker‐Brooks	2
Jeff L. Brown	2
Uttam Singisetti	1
Shivam Sharma	1
Jonathan Ogle	1
Larry Wang	1
Takeki Itoh	1
G. A. Seryogin	1
A.D. Levin	1
Geroge Seryogin	1
Haobo Yang	1
Michael Walker	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Metal/BaTiO<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> dielectric heterojunction diode with 5.7 MV/cm breakdown field	2019	Zhanbo Xia Hareesh Chandrasekar Wyatt Moore Caiyu Wang Aidan J. Lee Joe F. McGlone Nidhin Kurian Kalarickal Aaron R. Arehart Steven A. Ringel Fengyuan Yang	7
+	Low temperature homoepitaxy of (010) <b> <i>β</i> </b>-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window	2020	Arkka Bhattacharyya Praneeth Ranga Saurav Roy Jonathan Ogle Luisa Whittaker‐Brooks Sriram Krishnamoorthy	7
+ PDF Chat	Delta-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films and <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterostructures grown by metalorganic vapor-phase epitaxy	2020	Praneeth Ranga Arkka Bhattacharyya Ashwin K. Rishinaramangalam Yu Kee Ooi Michael A. Scarpulla Daniel Feezell Sriram Krishnamoorthy	7
+	Si-doped <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by metalorganic vapor-phase epitaxy	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy	7
+ PDF Chat	Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors	2020	Nidhin Kurian Kalarickal Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Wyatt Moore Joe F. McGlone Aaron R. Arehart Steven A. Ringel Hongping Zhao Siddharth Rajan	7
+ PDF Chat	Intrinsic electron mobility limits in <i>β</i>-Ga2O3	2016	Nan Ma Nicholas Tanen Amit Verma Zhi Guo Tengfei Luo Huili Grace Xing Debdeep Jena	6
+	High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup>	2021	Saurav Roy Arkka Bhattacharyya Praneeth Ranga Heather Splawn Jacob H. Leach Sriram Krishnamoorthy	5
+ PDF Chat	Delta-doped <b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> films with narrow FWHM grown by metalorganic vapor-phase epitaxy	2020	Praneeth Ranga Arkka Bhattacharyya Adrian Chmielewski Saurav Roy Nasim Alem Sriram Krishnamoorthy	4
+	Donors and deep acceptors in β-Ga2O3	2018	Adam T. Neal Shin Mou Subrina Rafique Hongping Zhao Elaheh Ahmadi James S. Speck K. T. Stevens J. D. Blevins Darren B. Thomson Neil Moser	4
+ PDF Chat	Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	2021	Arkka Bhattacharyya Praneeth Ranga Saurav Roy Carl Peterson Fikadu Alema G. A. Seryogin A. Osinsky Sriram Krishnamoorthy	4
+ PDF Chat	Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al <sub>x</sub> Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterostructure channels	2020	Praneeth Ranga Arkka Bhattacharyya Adrian Chmielewski Saurav Roy Rujun Sun Michael A. Scarpulla Nasim Alem Sriram Krishnamoorthy	4
+ PDF Chat	MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy	4
+ PDF Chat	Projector augmented-wave method	1994	Peter E. Blöchl	3
+ PDF Chat	Delta-doped β-gallium oxide field-effect transistor	2017	Sriram Krishnamoorthy Zhanbo Xia Sanyam Bajaj Mark Brenner Siddharth Rajan	3
+ PDF Chat	Electron mobility in monoclinic β-Ga<sub>2</sub>O<sub>3</sub>—Effect of plasmon-phonon coupling, anisotropy, and confinement	2017	Krishnendu Ghosh Uttam Singisetti	3
+ PDF Chat	Design of a β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown	2020	Saurav Roy Arkka Bhattacharyya Sriram Krishnamoorthy	3
+	Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor	2017	Sriram Krishnamoorthy Zhanbo Xia Chandan Joishi Yuewei Zhang Joe F. McGlone Jared M. Johnson Mark Brenner Aaron R. Arehart Jinwoo Hwang Saurabh Lodha	3
+ PDF Chat	4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup>	2022	Arkka Bhattacharyya Shivam Sharma Fikadu Alema Praneeth Ranga Saurav Roy Carl Peterson Geroge Seryogin A. Osinsky Uttam Singisetti Sriram Krishnamoorthy	3
+ PDF Chat	Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices	2017	Adam T. Neal Shin Mou Roberto López Jian V. Li Darren B. Thomson Kelson D. Chabak Gregg H. Jessen	2
+ PDF Chat	Vibrational and electron-phonon coupling properties of β-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field	2019	Kelsey Mengle Emmanouil Kioupakis	1
+ PDF Chat	Schottky Barrier Height Engineering in<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>Using SiO<sub>2</sub>Interlayer Dielectric	2020	Arkka Bhattacharyya Praneeth Ranga Muad Saleh Saurav Roy Michael A. Scarpulla Kelvin G. Lynn Sriram Krishnamoorthy	1
+ PDF Chat	Degenerate doping in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> single crystals through Hf-doping	2020	Muad Saleh Joel B. Varley Jani Jesenovec Arkka Bhattacharyya Sriram Krishnamoorthy Santosh K. Swain Kelvin G. Lynn	1
+	High electron density ${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doping using ultra-thin (1 nm) spacer layer	2019	Nidhin Kurian Kalarickal Zhanbo Xia Joe F. McGlone Yumo Liu Wyatt Moore Aaron R. Arehart S. A. Ringel Siddharth Rajan	1
+ PDF Chat	High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes	2014	Wan Sik Hwang Amit Verma Hartwin Peelaers Vladimir Protasenko Sergei Rouvimov Huili Grace Xing Alan Seabaugh Wilfried Haensch Chris G. Van de Walle Zbigniew Galazka	1
+	High electron density $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doping using ultra-thin (1 nm) spacer layer	2019	Nidhin Kurian Kalarickal Zhanbo Xia Joe F. McGlone Yumo Liu Wyatt Moore Aaron R. Arehart S. A. Ringel Siddharth Rajan	1
+ PDF Chat	A Comparative Study on the Electrical Properties of Vertical (<inline-formula> <tex-math notation="LaTeX">$\bar{\sf2}01$ </tex-math> </inline-formula>) and (010) <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes on EFG Single-Crystal Substrates	2018	Houqiang Fu Hong Chen Xuanqi Huang Izak Baranowski Jossue Montes Tsung-Han Yang Yuji Zhao	1
+ PDF Chat	Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>	2019	Jared M. Johnson Zhen Chen Joel B. Varley Christine M. Jackson Esmat Farzana Zeng Zhang Aaron R. Arehart Hsien‐Lien Huang Arda Genç Steven A. Ringel	1
+ PDF Chat	Solid-state neutron detectors based on thickness scalable hexagonal boron nitride	2017	Kawser Ahmed R. Dahal Adam Weltz James Lu Y. Danon I. Bhat	1
+ PDF Chat	Red luminescence in H-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">G</mml:mi><mml:msub><mml:mi mathvariant="normal">a</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>	2020	Thanh Tung Huynh E. Chikoidze Curtis P. Irvine M. Zakria Yves Dumont F. Hosseini Téhérani Eric V. Sandana P. Bove David J. Rogers Matthew R. Phillips	1
+ PDF Chat	Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV	2017	Adam T. Neal Shin Mou Roberto López Jian V. Li Darren B. Thomson Kelson D. Chabak Gregg H. Jessen	1
+ PDF Chat	Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping	2008	Li Liu Sunmin Ryu Michelle Tomasik Elena Stolyarova Naeyoung Jung Mark S. Hybertsen Michael L. Steigerwald Louis E. Brus George W. Flynn	1
+ PDF Chat	Alloyed β-(Al<i>x</i>Ga1−<i>x</i>)2O3 bulk Czochralski single β-(Al0.1Ga0.9)2O3 and polycrystals β-(Al0.33Ga0.66)2O3, β-(Al0.5Ga0.5)2O3), and property trends	2022	Jani Jesenovec B. Dutton Nicholas Stone‐Weiss Adrian Chmielewski Muad Saleh Carl Peterson Nasim Alem Sriram Krishnamoorthy John S. McCloy	1
+	N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium	2021	Praneeth Ranga Arkka Bhattacharyya Luisa Whittaker‐Brooks Michael A. Scarpulla Sriram Krishnamoorthy	1
+	High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$	2021	Saurav Roy Arkka Bhattacharyya Praneeth Ranga Heather Splawn Jacob H. Leach Sriram Krishnamoorthy	1
+ PDF Chat	Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets	2014	Lu Hua Li Jiří Červenka Kenji Watanabe Takashi Taniguchi Ying Chen	1
+ PDF Chat	Anisotropic thermal conductivity in single crystal β-gallium oxide	2015	Zhi Guo Amit Verma Xufei Wu Fangyuan Sun Austin Hickman Takekazu Masui Akito Kuramata Masataka Higashiwaki Debdeep Jena Tengfei Luo	1
+	Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors	2020	Nidhin Kurian Kalarickal Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Joe F. McGlone Wyatt Moore Aaron R. Arehart Steven A. Ringel Hongping Zhao Siddharth Rajan	1
+ PDF Chat	Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release Layer	2020	Michael J. Motala Eric W. Blanton Albert Hilton Eric R. Heller Christopher Muratore Katherine Burzynski Jeff L. Brown Kelson D. Chabak Michael F. Durstock Michael Snure	1
+	Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures	2020	Saurav Roy Arkka Bhattacharyya Sriram Krishnamoorthy	1
+ PDF Chat	In Situ Dielectric Al <sub>2</sub> O <sub>3</sub> /β‐Ga <sub>2</sub> O <sub>3</sub> Interfaces Grown Using Metal–Organic Chemical Vapor Deposition	2021	Saurav Roy Adrian Chmielewski Arkka Bhattacharyya Praneeth Ranga Rujun Sun Michael A. Scarpulla Nasim Alem Sriram Krishnamoorthy	1
+ PDF Chat	Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices	2020	Zhe Cheng Fengwen Mu Luke Yates Tadatomo Suga Samuel Graham	1