Delta-doped <b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> films with narrow FWHM grown by metalorganic vapor-phase epitaxy
Delta-doped <b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> films with narrow FWHM grown by metalorganic vapor-phase epitaxy
We report on the low-temperature metalorganic vapor-phase epitaxy (MOVPE) growth of silicon delta-doped β-Ga2O3 films with a low full width at half maximum (FWHM). The as-grown films are characterized using secondary-ion mass spectroscopy, capacitance–voltage, and Hall techniques. Secondary ion mass spectroscopy measurements show that surface segregation is the chief cause …