Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga2O3. Previously unobserved unintentional donors in commercially available (-201) Ga2O3 substrates have been …