Dielectric Reliability and Interface Trap Characterization in MOCVD
grown In-situ Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$
Dielectric Reliability and Interface Trap Characterization in MOCVD
grown In-situ Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$
In this article, we investigate the in-situ growth of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800{\deg}C. The Al$_2$O$_3$ is grown within the same reactor as the $\beta$-Ga$_2$O$_3$, employing trimethylaluminum (TMAl) and O$_2$ as precursors without breaking the vacuum. We characterize the shallow …