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Design of a β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN and polarization doped graded p-AlGaN are simulated and analyzed as the guard ring material, …