High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup>
High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup>
In this letter, fin-shape tri-gate <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 lateral MESFETs are demonstrated with a high power figure of merit (PFOM) of 0.95 GW/cm2 – a record high for any <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 transistor to date. A low-temperature un-doped buffer-channel stack …