Intrinsic electron mobility limits in <i>β</i>-Ga2O3
Intrinsic electron mobility limits in <i>β</i>-Ga2O3
By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities lower than 1018 cm-3. In spite of similar electron effective mass of beta-Ga2O3 to …