Schottky Barrier Height Engineering in<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>Using SiO<sub>2</sub>Interlayer Dielectric
Schottky Barrier Height Engineering in<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>Using SiO<sub>2</sub>Interlayer Dielectric
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and …