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High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes

High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches …