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Vibrational and electron-phonon coupling properties of β-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field
The wide band gap semiconductor β-Ga2O3 shows promise for applications in high-power and high-temperature electronics. The phonons of β-Ga2O3 play a crucial role in determining its important material characteristics for these applications such as its thermal transport, carrier mobility, and breakdown voltage. In this work, we apply predictive calculations based …