Ultra-Wide Band Gap Ga<sub>2</sub>O<sub>3</sub>-on-SiC MOSFETs
Ultra-Wide Band Gap Ga<sub>2</sub>O<sub>3</sub>-on-SiC MOSFETs
Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today's wide band gap power electronics. However, the most critical challenge to the commercialization of Ga2O3 electronics is overheating, which impacts the …