NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3
kV with Plasma Etch Field-Termination
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3
kV with Plasma Etch Field-Termination
This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, record-low reverse current leakage under high reverse bias, and high junction electric fields …