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In Situ Dielectric Al <sub>2</sub> O <sub>3</sub> /β‐Ga <sub>2</sub> O <sub>3</sub> Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum …