Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial
films measured using photoluminescence
Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial
films measured using photoluminescence
In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL …