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Metal/BaTiO<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> dielectric heterojunction diode with 5.7 MV/cm breakdown field
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in …