Steep-slope hysteresis-free negative capacitance MoS2 transistors

Type: Article

Publication Date: 2017-12-15

Citations: 476

DOI: https://doi.org/10.1038/s41565-017-0010-1

Locations

  • arXiv (Cornell University) - View - PDF
  • PubMed - View
  • DataCite API - View
  • Nature Nanotechnology - View

Similar Works

Action Title Year Authors
+ PDF Chat Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation 2022 Jingfeng Song
Yubo Qi
Zhiyong Xiao
Kun Wang
Dawei Li
Seung‐Hyun Kim
Angus I. Kingon
Andrew M. Rappe
Xia Hong
+ Getting to the Bottom of Negative Capacitance FETs 2018 Wei Cao
Kaustav Banerjee
+ PDF Chat A critical review of recent progress on negative capacitance field-effect transistors 2019 Muhammad A. Alam
Mengwei Si
Peide D. Ye
+ Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance 2017 Mengwei Si
Chun-Jung Su
Chunsheng Jiang
Nathan J. Conrad
Hong Zhou
Kerry Maize
Gang Qiu
Chien-Ting Wu
Ali Shakouri
Muhammad A. Alam
+ Domain Wall Enabled Hysteresis-Free Steep Slope Switching in MoS$_2$ Transistors 2019 Jingfeng Song
Yubo Qi
Zhiyong Xiao
Seung‐Hyun Kim
Angus I. Kingon
Andrew M. Rappe
Xia Hong
+ Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component 2020 Peng Wu
Joerg Appenzeller
+ PDF Chat Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component 2021 Peng Wu
Joerg Appenzeller
+ PDF Chat MoS2 dual-gate transistors with electrostatically doped contacts 2019 Fuyou Liao
Yaocheng Sheng
Zhongxun Guo
Hongwei Tang
Yin Wang
Lingyi Zong
Xinyu Chen
Antoine Riaud
Jiahe Zhu
Yufeng Xie
+ PDF Chat Two-Dimensional Cold Electron Transport for Steep-Slope Transistors 2021 Maomao Liu
Hemendra Nath Jaiswal
Simran Shahi
Sichen Wei
Yu Fu
Chaoran Chang
Anindita Chakravarty
Xiaochi Liu
Cheng Yang
Yanpeng Liu
+ Insights into Cold Source MOSFETs with Sub-60 mV/decade and Negative Differential Resistance Effect 2021 Yi-Heng Yin
Zhaofu Zhang
Chen Shao
John Robertson
Yuzheng Guo
+ PDF Chat On the negative capacitance in ferroelectric heterostructures 2024 Yuchu Qin
Jiangyu Li
+ Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect 2020 Amin Rassekh
Jean-Michel Sallèse
Farzan Jazaeri
Morteza Fathipour
Adrian M. Ionescu
+ Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors 2018 Ali Saeidi
Farzan Jazaeri
Igor Stolichnov
Christian Enz
Adrian M. Ionescu
+ PDF Chat Dual-sided charge-coupled devices 2024 J. Tiffenberg
Daniel EgaĂąa-Ugrinovic
Miguel Sofo-Haro
Peizhi Du
Rouven Essig
Guillermo Fernandez-Moroni
Sho Uemura
+ Two-dimensional Cold Electron Transport for Steep-slope Transistors 2020 Maomao Liu
Hemendra Nath Jaiswal
Simran Shahi
Sichen Wei
Yu Fu
Chaoran Chang
Anindita Chakravarty
Xiaochi Liu
Cheng Yang
Yanpeng Liu
+ Harnessing Unipolar Threshold Switches for Enhanced Rectification 2023 Md Mazharul Islam
Shamiul Alam
Garrett S. Rose
Aly E. Fathy
Sumeet Kumar Gupta
Ahmedullah Aziz
+ PDF Chat Harnessing Unipolar Threshold Switches for Enhanced Rectification 2024 Md Mazharul Islam
Shamiul Alam
Garrett S. Rose
Aly E. Fathy
Sumeet Kumar Gupta
Ahmedullah Aziz
+ PDF Chat Transient nature of negative capacitance in ferroelectric field-effect transistors 2017 Kwok K. Ng
S.J. Hillenius
Alexei Gruverman
+ PDF Chat Measurement of mobility in dual-gated MoS2 transistors 2013 Michael S. Fuhrer
James Hone
+ 2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices 2023 Zijing Zhao
Shaloo Rakheja
Wenjuan Zhu

Works That Cite This (36)

Action Title Year Authors
+ Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y 2021 Xianghan Xu
Fei-Ting Huang
Yubo Qi
Sobhit Singh
Karin M. Rabe
Dimuthu Obeysekera
Junjie Yang
Ming-Wen Chu
Sang‐Wook Cheong
+ PDF Chat Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm−2 regime and artificial synaptic behaviour 2019 Jakob Lenz
Fabio Giudice
Fabian R. Geisenhof
Felix Winterer
R. Thomas Weitz
+ β-Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications 2017 Mengwei Si
Lingming Yang
Hong Zhou
Peide D. Ye
+ PDF Chat Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory 2021 Xiwen Liu
Dixiong Wang
Kwan‐Ho Kim
Keshava Katti
Jeffrey Zheng
Pariasadat Musavigharavi
Jinshui Miao
Eric A. Stach
Roy H. Olsson
Deep Jariwala
+ PDF Chat Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures 2019 Anyuan Gao
Jiawei Lai
Yaojia Wang
Zhen Zhu
Junwen Zeng
Geliang Yu
Naizhou Wang
Wenchao Chen
Tianjun Cao
Weida Hu
+ PDF Chat Van der Waals layered ferroelectric CuInP2S6: Physical properties and device applications 2020 Shuang Zhou
LĂź You
Hailin Zhou
Yong Pu
Zhigang Gui
Junling Wang
+ PDF Chat Harnessing ferroelectric domains for negative capacitance 2019 Igor A. Luk’yanchuk
Yu. A. Tikhonov
AnaĂŻs SenĂŠ
A. G. Razumnaya
V. M. Vinokur
+ PDF Chat Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor 2018 Zhong‐Yuan Lu
Claudy Rayan Serrao
Asif Islam Khan
James D. Clarkson
Justin C. Wong
R. Ramesh
Sayeef Salahuddin
+ Van der Waals Layered Ferroelectric CuInP2S6: Physical Properties and Device Applications 2020 Shuang Zhou
LĂź You
Hailin Zhou
Yong Pu
Zhigang Gui
Junling Wang
+ PDF Chat Giant Conductivity Modulation of Aluminum Oxide Using Focused Ion Beam 2019 Simone Bianconi
Min-Su Park
Hooman Mohseni