Prefer a chat interface with context about you and your work?
Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component
Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 millivolts/decade (mV/decade) switching has been demonstrated in NC-FETs with various device structures and material systems. However, the detailed mechanisms of the observed steep-slope switching in some of these experiments are under intense debate. …