Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation
Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS$_2$ transistors back-gated by single-layer polycrystalline …