Steven A. Ringel

Follow

Generating author description...

All published works
Action Title Year Authors
+ PDF Chat Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors 2020 Nidhin Kurian Kalarickal
Zixuan Feng
A F M Anhar Uddin Bhuiyan
Zhanbo Xia
Wyatt Moore
Joe F. McGlone
Aaron R. Arehart
Steven A. Ringel
Hongping Zhao
Siddharth Rajan
+ Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors 2020 Nidhin Kurian Kalarickal
Zixuan Feng
A F M Anhar Uddin Bhuiyan
Zhanbo Xia
Joe F. McGlone
Wyatt Moore
Aaron R. Arehart
Steven A. Ringel
Hongping Zhao
Siddharth Rajan
+ Probing charge transport and background doping in MOCVD grown (010) ${\beta}$-Ga$_{2}$O$_{3}$ 2020 Zixuan Feng
A F M Anhar Uddin Bhuiyan
Zhanbo Xia
Wyatt Moore
Zhaoying Chen
Joe F. McGlone
David R. Daughton
Aaron R. Arehart
Steven A. Ringel
Siddharth Rajan
+ Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors 2020 Nidhin Kurian Kalarickal
Zixuan Feng
A F M Anhar Uddin Bhuiyan
Zhanbo Xia
Joe F. McGlone
Wyatt Moore
Aaron R. Arehart
Steven A. Ringel
Hongping Zhao
Siddharth Rajan
+ Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$ 2020 Zixuan Feng
A F M Anhar Uddin Bhuiyan
Zhanbo Xia
Wyatt Moore
Zhaoying Chen
Joe F. McGlone
David R. Daughton
Aaron R. Arehart
Steven A. Ringel
Siddharth Rajan
+ PDF Chat Metal/BaTiO<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> dielectric heterojunction diode with 5.7 MV/cm breakdown field 2019 Zhanbo Xia
Hareesh Chandrasekar
Wyatt Moore
Caiyu Wang
Aidan J. Lee
Joe F. McGlone
Nidhin Kurian Kalarickal
Aaron R. Arehart
Steven A. Ringel
Fengyuan Yang
+ PDF Chat Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> 2019 Jared M. Johnson
Zhen Chen
Joel B. Varley
Christine M. Jackson
Esmat Farzana
Zeng Zhang
Aaron R. Arehart
Hsien‐Lien Huang
Arda Genç
Steven A. Ringel
+ PDF Chat Velocity saturation in La-doped BaSnO<sub>3</sub> thin films 2019 Hareesh Chandrasekar
Junao Cheng
Tianshi Wang
Zhanbo Xia
Nicholas G. Combs
Christopher R. Freeze
Patrick Marshall
Joe F. McGlone
Aaron R. Arehart
Steven A. Ringel
+ Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 2019 Nidhin Kurian Kalarickal
Zhanbo Xia
Joe F. McGlone
Sriram Krishnamoorthy
Wyatt Moore
Mark Brenner
Aaron R. Arehart
Steven A. Ringel
Siddharth Rajan
Common Coauthors
Commonly Cited References
Action Title Year Authors # of times referenced
+ PDF Chat Intrinsic electron mobility limits in <i>β</i>-Ga2O3 2016 Nan Ma
Nicholas Tanen
Amit Verma
Zhi Guo
Tengfei Luo
Huili Grace Xing
Debdeep Jena
3
+ PDF Chat Metal/BaTiO<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> dielectric heterojunction diode with 5.7 MV/cm breakdown field 2019 Zhanbo Xia
Hareesh Chandrasekar
Wyatt Moore
Caiyu Wang
Aidan J. Lee
Joe F. McGlone
Nidhin Kurian Kalarickal
Aaron R. Arehart
Steven A. Ringel
Fengyuan Yang
2
+ PDF Chat High-field conduction in barium titanate 2005 Finlay D. Morrison
Pavlo Zubko
Dong-Hoon Jung
J. F. Scott
Paul N. W. Baxter
M. Saad
R. M. Bowman
J. M. Gregg
1
+ PDF Chat High Mobility in a Stable Transparent Perovskite Oxide 2012 Hyung Joon Kim
Useong Kim
Hoon Min Kim
Tai Hoon Kim
Hyo Sik Mun
Byung‐Gu Jeon
Kwang Taek Hong
Woong-Jhae Lee
Chanjong Ju
Kee Hoon Kim
1
+ PDF Chat Optimized norm-conserving Vanderbilt pseudopotentials 2013 D. R. Hamann
1
+ PDF Chat QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials 2009 Paolo Giannozzi
Stefano Baroni
Nicola Bonini
Matteo Calandra
Roberto Car
Carlo Cavazzoni
Davide Ceresoli
G. Chiarotti
Matteo Cococcioni
IsmaĂŻla Dabo
1
+ PDF Chat EPW: Electron–phonon coupling, transport and superconducting properties using maximally localized Wannier functions 2016 Samuel Poncé
Elena R. Margine
Carla Verdi
Feliciano Giustino
1
+ PDF Chat Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy 2016 Jared M. Johnson
Soohyun Im
Wolfgang Windl
Jinwoo Hwang
1
+ PDF Chat First-principles analysis of electron transport in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>BaSnO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> 2017 Karthik Krishnaswamy
Burak Himmetoḥlu
Youngho Kang
Anderson Janotti
Chris G. Van de Walle
1
+ A chart for the energy levels of the square quantum well 2016 Marco Chiani
1
+ PDF Chat Delta-doped β-gallium oxide field-effect transistor 2017 Sriram Krishnamoorthy
Zhanbo Xia
Sanyam Bajaj
Mark Brenner
Siddharth Rajan
1
+ PDF Chat Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy 2017 Hanjong Paik
Zhen Chen
Edward B. Lochocki
Ariel Seidner H.
Amit Verma
Nicholas Tanen
Jisung Park
Masaki Uchida
Shun‐Li Shang
Bi‐Cheng Zhou
1
+ PDF Chat Origin of the superior conductivity of perovskite Ba(Sr)SnO3 2013 Heng-Rui Liu
Ji‐Hui Yang
Hongjun Xiang
Xing Gong
Su‐Huai Wei
1
+ PDF Chat Computational identification of Ga-vacancy related electron paramagnetic resonance centers in <i>β</i>-Ga2O3 2019 Dmitry Skachkov
Walter R. L. Lambrecht
H. J. von Bardeleben
U. Gerstmann
Quốc Duy Hồ
PĂŠter DeĂĄk
1
+ PDF Chat Optical-Phonon-Limited High-Field Transport in Layered Materials 2015 Hareesh Chandrasekar
K. Ganapathi
Shubhadeep Bhattacharjee
Navakanta Bhat
Digbijoy N. Nath
1
+ PDF Chat β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect 2017 Hong Zhou
Kerry Maize
Gang Qiu
Ali Shakouri
Peide D. Ye
1
+ PDF Chat High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm 2016 Hong Zhou
Mengwei Si
Sami Alghamdi
Gang Qiu
Lingming Yang
Peide D. Ye
1
+ PDF Chat Density-dependent electron transport and precise modeling of GaN high electron mobility transistors 2015 Sanyam Bajaj
Omor Shoron
Pil Sung Park
Sriram Krishnamoorthy
Fatih Akyol
Ting-Hsiang Hung
Shahed Reza
E.M. Chumbes
Jacob B. Khurgin
Siddharth Rajan
1
+ Donors and deep acceptors in β-Ga2O3 2018 Adam T. Neal
Shin Mou
Subrina Rafique
Hongping Zhao
Elaheh Ahmadi
James S. Speck
K. T. Stevens
J. D. Blevins
Darren B. Thomson
Neil Moser
1
+ PDF Chat Effect of Optical Phonon Scattering on the Performance of GaN Transistors 2012 Tian Fang
Ronghua Wang
Huili Grace Xing
Siddharth Rajan
Debdeep Jena
1