Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K …