Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 107 cm/s at a low sheet charge density of …