Juerong Li

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Common Coauthors
Commonly Cited References
Action Title Year Authors # of times referenced
+ PDF Chat Weak localization thickness measurements of Si:P delta-layers 2004 Dan Sullivan
B. E. Kane
Philip E. Thompson
3
+ Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers 2018 Xiqiao Wang
Joseph A. Hagmann
Pradeep Namboodiri
Jonathan Wyrick
Kai Ming Li
Roy Murray
Alline F. Myers
Frederick Misenkosen
M. D. Stewart
Curt A. Richter
2
+ PDF Chat Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer 2002 L. Oberbeck
Neil J. Curson
M. Y. Simmons
R. Brenner
A. R. Hamilton
Steven R. Schofield
Robert G. Clark
2
+ PDF Chat Atomically Precise Placement of Single Dopants in Si 2003 Steven R. Schofield
Neil J. Curson
M. Y. Simmons
F. J. Rueß
Toby Hallam
L. Oberbeck
Robert G. Clark
2
+ PDF Chat Inelastic scattering in a monolayer graphene sheet: A weak-localization study 2008 Dong‐Keun Ki
Dongchan Jeong
Jaehyun Choi
Hu-Jong Lee
Kee-Su Park
1
+ PDF Chat Theory of one and two donors in silicon 2015 André Saraiva
Alejandra Baena
M. J. Calderón
Belita Koiller
1
+ PDF Chat Dimensional crossover of weak localization in a magnetic field 1997 C. Mauz
Achim Rosch
P. Wölfle
1
+ PDF Chat High-resolution soft X-ray beamline ADRESS at the Swiss Light Source for resonant inelastic X-ray scattering and angle-resolved photoelectron spectroscopies 2010 Vladimir N. Strocov
Thorsten Schmitt
U. Flechsig
Thomas Schmidt
A. Imhof
Q. Chen
Jörg Raabe
R. Betemps
D. Zimoch
Juraj Krempaský
1
+ PDF Chat STM characterization of the Si-P heterodimer 2004 Neil J. Curson
Steven R. Schofield
M. Y. Simmons
L. Oberbeck
Jeremy L. O’Brien
Robert G. Clark
1
+ PDF Chat Single-donor ionization energies in a nanoscale CMOS channel 2009 M. Pierre
R. Wacquez
X. Jehl
M. Sanquer
M. Vinet
O. Cueto
1
+ Quantum computation with doped silicon cavities 2010 Miguel Abanto
L. Davidovich
Belita Koiller
R. L. de Matos Filho
1
+ PDF Chat Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon 2009 Andrea Morello
Christopher C. Escott
Hans Huebl
L. H. Willems van Beveren
Lloyd C. L. Hollenberg
D.N. Jamieson
Andrew S. Dzurak
Robert G. Clark
1
+ PDF Chat Van der Waals heterostructures 2013 A. K. Geim
I. V. Grigorieva
1
+ PDF Chat Bottom-up assembly of metallic germanium 2015 Giordano Scappucci
W. M. Klesse
L. A. Yeoh
Damien J. Carter
Oliver Warschkow
Nigel A. Marks
David L. Jaeger
Giovanni Capellini
M. Y. Simmons
A. R. Hamilton
1
+ PDF Chat Silicon quantum electronics 2013 Floris A. Zwanenburg
Andrew S. Dzurak
Andrea Morello
M. Y. Simmons
Lloyd C. L. Hollenberg
Gerhard Klimeck
Sven Rogge
S. N. Coppersmith
M. A. Eriksson
1
+ PDF Chat Simplifying quantum logic using higher-dimensional Hilbert spaces 2008 B. P. Lanyon
Marco Barbieri
M. P. Almeida
Thomas Jennewein
Timothy C. Ralph
Kevin J. Resch
Geoff J. Pryde
Jeremy L. O’Brien
Alexei Gilchrist
A. G. White
1
+ PDF Chat Coherent control of Rydberg states in silicon 2010 P. T. Greenland
Stephen A. Lynch
A. F. G. van der Meer
B. N. Murdin
C. R. Pidgeon
Britta Redlich
N. Q. Vinh
G. Aeppli
1
+ PDF Chat Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy 2013 Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
1
+ PDF Chat Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET’s 2001 Harsh Mathur
Harold U. Baranger
1
+ PDF Chat Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas 2013 Jill A. Miwa
Philip Hofmann
M. Y. Simmons
Justin W. Wells
1
+ PDF Chat Quantum simulation of the Hubbard model with dopant atoms in silicon 2016 Joe Salfi
Jan A. Mol
Rajib Rahman
Gerhard Klimeck
M. Y. Simmons
Lloyd C. L. Hollenberg
Sven Rogge
1
+ PDF Chat Multiple-Quantum Transitions and Charge-Induced Decoherence of Donor Nuclear Spins in Silicon 2017 David P. Franke
Moritz Pflüger
Kohei M. Itoh
Martin S. Brandt
1
+ PDF Chat Intrinsic accuracy in 3-dimensional photoemission band mapping 2003 Vladimir N. Strocov
1
+ PDF Chat Extended Hubbard model for mesoscopic transport in donor arrays in silicon 2017 Nguyen H. Le
A. J. Fisher
Eran Ginossar
1
+ PDF Chat Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors 2018 Federico Mazzola
Justin W. Wells
A. C. Pakpour-Tabrizi
Richard B. Jackman
T. Balasubramanian
Philip Hofmann
Jill A. Miwa
1
+ PDF Chat Two- to three-dimensional crossover in a dense electron liquid in silicon 2018 Guy Matmon
Eran Ginossar
B. J. Villis
Alexander Kölker
Tingbin Lim
Hari S. Solanki
Steven R. Schofield
Neil J. Curson
Juerong Li
B. N. Murdin
1
+ PDF Chat Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy 2019 Frédéric Joucken
J. Ávila
Zhehao Ge
Eberth A. Quezada-López
Hemian Yi
R Le Goff
Emmanuel Baudin
John L. Davenport
Kenji Watanabe
Takashi Taniguchi
1
+ PDF Chat Observation and origin of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="normal">Δ</mml:mi></mml:math> manifold in Si:P <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>δ</mml:mi></mml:math> layers 2020 Ann Julie Holt
Sanjoy K. Mahatha
Raluca-Maria Stan
Frode S. Strand
Thomas Nyborg
Davide Curcio
Alex K. Schenk
Simon P. Cooil
Marco Bianchi
Justin W. Wells
1
+ PDF Chat P-type $\delta$-doping with Diborane on Si(001) for STM Based Dopant Device Fabrication 2019 Tomáš Škereň
S. A. Köster
Bastien Douhard
Claudia Fleischmann
Andreas Fuhrer
1
+ PDF Chat Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy 2020 Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
1
+ PDF Chat Bipolar device fabrication using a scanning tunnelling microscope 2020 Tomáš Škereň
S. A. Köster
Bastien Douhard
Claudia Fleischmann
Andreas Fuhrer
1
+ PDF Chat Spatially resolved resonant tunneling on single atoms in silicon 2015 B. Voisin
Joe Salfi
Juanita Bocquel
Rajib Rahman
Sven Rogge
1
+ PDF Chat Addressable electron spin resonance using donors and donor molecules in silicon 2018 Samuel J. Hile
Lukas Fricke
Matthew House
Eldad Peretz
Chin‐Yi Chen
Yu Wang
Matthew A. Broome
S. K. Gorman
J. G. Keizer
Rajib Rahman
1
+ PDF Chat Spatially resolving valley quantum interference of a donor in silicon 2014 Joe Salfi
Jan A. Mol
Rajib Rahman
Gerhard Klimeck
M. Y. Simmons
Lloyd C. L. Hollenberg
Sven Rogge
1
+ PDF Chat Scaling silicon-based quantum computing using CMOS technology 2021 M. Fernando González-Zalba
S. De Franceschi
Edoardo Charbon
Tristan Meunier
M. Vinet
Andrew S. Dzurak
1
+ PDF Chat Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors 2015 David P. Franke
Florian M. Hrubesch
Markus Künzl
Harry Becker
Kohei M. Itoh
M. Stutzmann
Felix Hoehne
L. Dreher
Martin S. Brandt
1
+ PDF Chat Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon 2023 Procopios Constantinou
Taylor J. Z. Stock
Eleanor Crane
Alexander Kölker
Marcel van Loon
Juerong Li
Sarah Fearn
Henric Bornemann
Nicolò D'Anna
A. J. Fisher
1
+ PDF Chat Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy 2004 L. Oberbeck
Neil J. Curson
Toby Hallam
M. Y. Simmons
G. Bilger
Robert G. Clark
1
+ PDF Chat Effective mass theory of monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>doping in the high-density limit 2012 Daniel W. Drumm
Lloyd C. L. Hollenberg
M. Y. Simmons
Mark Friesen
1
+ PDF Chat Effect of annealing on electron dephasing in three-dimensional polycrystalline metals 2002 Juhn‐Jong Lin
Yuan‐Liang Zhong
Tao Li
1