Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET’s
Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET’s
The effect of silicon-oxide interface roughness on the weak-localization magnetoconductance of a silicon metal-oxide-semiconductor field-effect transistor in a magnetic field, tilted with respect to the interface, is studied. It is shown that an electron picks up a random Berry's phase as it traverses a closed orbit. Effectively, due to roughness, …