Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
We study subsurface arsenic dopants in a hydrogen-terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant-related features that fall into two classes, which we call As1 and As2. When imaged in occupied states, the As1 features appear as anisotropic protrusions …