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Observation and origin of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="normal">Δ</mml:mi></mml:math> manifold in Si:P <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>δ</mml:mi></mml:math> layers

Observation and origin of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="normal">Δ</mml:mi></mml:math> manifold in Si:P <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>δ</mml:mi></mml:math> layers

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$ to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. …