Steven R. Schofield

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All published works
Action Title Year Authors
+ PDF Chat Roadmap on Atomic-scale Semiconductor Devices 2025 Steven R. Schofield
A. J. Fisher
Eran Ginossar
Joseph W. Lyding
Richard M. Silver
Fan Fei
Pradeep Namboodiri
Jonathan Wyrick
Mateus G. Masteghin
David Cox
+ PDF Chat Roadmap on Atomic-scale Semiconductor Devices 2025 Steven R. Schofield
A. J. Fisher
Eran Ginossar
Joseph W. Lyding
Richard M. Silver
Fan Fei
Pradeep Namboodiri
Jonathan Wyrick
Mateus G. Masteghin
David Cox
+ PDF Chat Element-specific, non-destructive profiling of layered heterostructures 2024 Nicolò D'Anna
Jamie Bragg
Elizabeth Skoropata
Nazaret Ortiz Hernández
Anne McConnell
Matthew Clemence
Hiroki Ueda
Procopios Constantinou
Kieran Spruce
Taylor J. Z. Stock
+ PDF Chat Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication 2024 Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
David R. Bowler
Steven R. Schofield
Neil J. Curson
+ PDF Chat Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon 2023 Procopios Constantinou
Taylor J. Z. Stock
Eleanor Crane
Alexander Kölker
Marcel van Loon
Juerong Li
Sarah Fearn
Henric Bornemann
Nicolò D'Anna
A. J. Fisher
+ Resistless EUV lithography: Photon-induced oxide patterning on silicon 2023 Li‐Ting Tseng
Prajith Karadan
Dimitrios Kazazis
Procopios Constantinou
Taylor J. Z. Stock
Neil J. Curson
Steven R. Schofield
Matthias Muntwiler
G. Aeppli
Yasin Ekinci
+ Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon 2023 Nicolò D'Anna
Darío Ferreira Sánchez
Guy Matmon
Jamie Bragg
Procopios Constantinou
Taylor J. Z. Stock
Sarah Fearn
Steven R. Schofield
Neil J. Curson
M. Bartkowiak
+ Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication 2023 Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
David R. Bowler
Steven R. Schofield
Neil J. Curson
+ Room temperature donor incorporation for quantum devices: arsine on germanium 2022 Emily V. S. Hofmann
Taylor J. Z. Stock
Oliver Warschkow
Rebecca Conybeare
Neil J. Curson
Steven R. Schofield
+ Non-destructive X-ray imaging of patterned delta-layer devices in silicon 2022 Nicolò D'Anna
Darío Ferreira Sánchez
Guy Matmon
Jamie Bragg
Procopios Constantinou
Taylor J. Z. Stock
Sarah Fearn
Steven R. Schofield
Neil J. Curson
M. Bartkowiak
+ PDF Chat Substitutional Tin Acceptor States in Black Phosphorus 2021 M. Wentink
Julian Gaberle
Martik Aghajanian
Arash A. Mostofi
Neil J. Curson
Johannes Lischner
Steven R. Schofield
Alexander L. Shluger
Anthony J. Kenyon
+ PDF Chat Charge Density Waves in Electron-Doped Molybdenum Disulfide 2021 Mohammed K. Bin Subhan
Asif Suleman
Gareth John Moore
Peter Phu
Moritz Hoesch
H. Kurebayashi
Christopher A. Howard
Steven R. Schofield
+ PDF Chat Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy 2020 Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
+ Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy 2019 Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
+ Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy 2019 Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
+ PDF Chat Two- to three-dimensional crossover in a dense electron liquid in silicon 2018 Guy Matmon
Eran Ginossar
B. J. Villis
Alexander Kölker
Tingbin Lim
Hari S. Solanki
Steven R. Schofield
Neil J. Curson
Juerong Li
B. N. Murdin
+ PDF Chat Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory 2017 Veronika Brázdová
David R. Bowler
Kitiphat Sinthiptharakoon
Philipp Studer
Adam Rahnejat
Neil J. Curson
Steven R. Schofield
A. J. Fisher
+ PDF Chat Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1) 2014 Kane M. O’Donnell
Oliver Warschkow
Asif Suleman
Adam Fahy
Lars Thomsen
Steven R. Schofield
+ PDF Chat Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy 2013 Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
+ PDF Chat Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field 2013 M. Bozkurt
M. R. Mahani
Philipp Studer
Jian‐Ming Tang
Steven R. Schofield
Neil J. Curson
Michael E. Flatté
A. Yu. Silov
Cyrus F. Hirjibehedin
C. M. Canali
+ Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy 2013 Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
+ Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy 2013 Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
+ PDF Chat STM characterization of the Si-P heterodimer 2004 Neil J. Curson
Steven R. Schofield
M. Y. Simmons
L. Oberbeck
Jeremy L. O’Brien
Robert G. Clark
+ PDF Chat Split-off dimer defects on the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:math>surface 2004 Steven R. Schofield
Neil J. Curson
Jeremy L. O’Brien
M. Y. Simmons
Robert G. Clark
Nigel A. Marks
Hugh F. Wilson
Geoffrey W. Brown
M. E. Hawley
+ PDF Chat Atomically Precise Placement of Single Dopants in Si 2003 Steven R. Schofield
Neil J. Curson
M. Y. Simmons
F. J. Rueß
Toby Hallam
L. Oberbeck
Robert G. Clark
+ PDF Chat Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer 2002 L. Oberbeck
Neil J. Curson
M. Y. Simmons
R. Brenner
A. R. Hamilton
Steven R. Schofield
Robert G. Clark
+ PDF Chat Towards the fabrication of phosphorus qubits for a silicon quantum computer 2001 Jeremy L. O’Brien
Steven R. Schofield
M. Y. Simmons
Robert G. Clark
Andrew S. Dzurak
Neil J. Curson
B. E. Kane
N.S. McAlpine
M. E. Hawley
Geoff W. Brown
Common Coauthors
Commonly Cited References
Action Title Year Authors # of times referenced
+ PDF Chat Atomically Precise Placement of Single Dopants in Si 2003 Steven R. Schofield
Neil J. Curson
M. Y. Simmons
F. J. Rueß
Toby Hallam
L. Oberbeck
Robert G. Clark
7
+ PDF Chat Towards the fabrication of phosphorus qubits for a silicon quantum computer 2001 Jeremy L. O’Brien
Steven R. Schofield
M. Y. Simmons
Robert G. Clark
Andrew S. Dzurak
Neil J. Curson
B. E. Kane
N.S. McAlpine
M. E. Hawley
Geoff W. Brown
6
+ PDF Chat Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer 2002 L. Oberbeck
Neil J. Curson
M. Y. Simmons
R. Brenner
A. R. Hamilton
Steven R. Schofield
Robert G. Clark
5
+ PDF Chat Weak localization thickness measurements of Si:P delta-layers 2004 Dan Sullivan
B. E. Kane
Philip E. Thompson
4
+ PDF Chat Spatial Structure of an Individual Mn Acceptor in GaAs 2004 Andrei M. Yakunin
A. Yu. Silov
P. M. Koenraad
J. H. Wolter
W. Van Roy
J. De Boeck
Jian‐Ming Tang
Michael E. Flatté
4
+ PDF Chat Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy 2013 Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
3
+ PDF Chat Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy 2020 Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
3
+ PDF Chat Spatially resolved resonant tunneling on single atoms in silicon 2015 B. Voisin
Joe Salfi
Juanita Bocquel
Rajib Rahman
Sven Rogge
2
+ Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers 2018 Xiqiao Wang
Joseph A. Hagmann
Pradeep Namboodiri
Jonathan Wyrick
Kai Ming Li
Roy Murray
Alline F. Myers
Frederick Misenkosen
M. D. Stewart
Curt A. Richter
2
+ PDF Chat Two- to three-dimensional crossover in a dense electron liquid in silicon 2018 Guy Matmon
Eran Ginossar
B. J. Villis
Alexander Kölker
Tingbin Lim
Hari S. Solanki
Steven R. Schofield
Neil J. Curson
Juerong Li
B. N. Murdin
2
+ PDF Chat Extended Hubbard model for mesoscopic transport in donor arrays in silicon 2017 Nguyen H. Le
A. J. Fisher
Eran Ginossar
2
+ PDF Chat Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures 2000 R. B. Vrijen
Eli Yablonovitch
Kang Wang
Hong Wen Jiang
A. A. Balandin
Vwani Roychowdhury
Tal Mor
David P. DiVincenzo
2
+ PDF Chat Silicon quantum electronics 2013 Floris A. Zwanenburg
Andrew S. Dzurak
Andrea Morello
M. Y. Simmons
Lloyd C. L. Hollenberg
Gerhard Klimeck
Sven Rogge
S. N. Coppersmith
M. A. Eriksson
2
+ PDF Chat Quantum simulation of the Hubbard model with dopant atoms in silicon 2016 Joe Salfi
Jan A. Mol
Rajib Rahman
Gerhard Klimeck
M. Y. Simmons
Lloyd C. L. Hollenberg
Sven Rogge
2
+ PDF Chat STM characterization of the Si-P heterodimer 2004 Neil J. Curson
Steven R. Schofield
M. Y. Simmons
L. Oberbeck
Jeremy L. O’Brien
Robert G. Clark
2
+ PDF Chat Coherent control of Rydberg states in silicon 2010 P. T. Greenland
Stephen A. Lynch
A. F. G. van der Meer
B. N. Murdin
C. R. Pidgeon
Britta Redlich
N. Q. Vinh
G. Aeppli
2
+ PDF Chat Phase diagram of electron-doped dichalcogenides 2014 Malte Rösner
Stephan Haas
T. O. Wehling
1
+ PDF Chat Effective mass theory of monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>doping in the high-density limit 2012 Daniel W. Drumm
Lloyd C. L. Hollenberg
M. Y. Simmons
Mark Friesen
1
+ PDF Chat Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions 2006 Dale Kitchen
Anthony Richardella
Jian‐Ming Tang
Michael E. Flatté
Ali Yazdani
1
+ PDF Chat Optically Probing the Fine Structure of a Single Mn Atom in an InAs Quantum Dot 2007 A. Kudelski
A. Lemaı̂tre
A. Miard
P. Voisin
T.C.M. Graham
Richard J. Warburton
O. Krebs
1
+ PDF Chat Theory of one and two donors in silicon 2015 André Saraiva
Alejandra Baena
M. J. Calderón
Belita Koiller
1
+ PDF Chat Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors 2005 T. Jungwirth
Kai Wang
J. Mas̆ek
K. W. Edmonds
Jürgen König
Jairo Sinova
Marco Polini
N. A. Goncharuk
A. H. MacDonald
M. Sawicki
1
+ PDF Chat Black Phosphorus: Narrow Gap, Wide Applications 2015 Andrés Castellanos-Gómez
1
+ PDF Chat Dimensional crossover of weak localization in a magnetic field 1997 C. Mauz
Achim Rosch
P. Wölfle
1
+ PDF Chat Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te-doped GaAs single crystals 1999 A. Depuydt
C. Van Haesendonck
N. S. Maslova
V. I. Panov
S. V. Savinov
P. I. Arseev
1
+ PDF Chat Quantum control of proximal spins using nanoscale magnetic resonance imaging 2011 M. S. Grinolds
Patrick Maletinsky
Sungkun Hong
Mikhail D. Lukin
Ronald L. Walsworth
Amir Yacoby
1
+ PDF Chat High-resolution soft X-ray beamline ADRESS at the Swiss Light Source for resonant inelastic X-ray scattering and angle-resolved photoelectron spectroscopies 2010 Vladimir N. Strocov
Thorsten Schmitt
U. Flechsig
Thomas Schmidt
A. Imhof
Q. Chen
Jörg Raabe
R. Betemps
D. Zimoch
Juraj Krempaský
1
+ PDF Chat Strain-Induced Gap Modification in Black Phosphorus 2014 Aleksandr Rodin
Alexandra Carvalho
A. H. Castro Neto
1
+ PDF Chat Anisotropic exchange interactions in III-V diluted magnetic semiconductors 2005 Carsten Timm
A. H. MacDonald
1
+ PDF Chat Inelastic scattering in a monolayer graphene sheet: A weak-localization study 2008 Dong‐Keun Ki
Dongchan Jeong
Jaehyun Choi
Hu-Jong Lee
Kee-Su Park
1
+ PDF Chat Atomically Thin<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>: A New Direct-Gap Semiconductor 2010 Kin Fai Mak
Changgu Lee
James Hone
Jie Shan
Tony F. Heinz
1
+ PDF Chat Shallow-donor wave functions and donor-pair exchange in silicon:<i>Ab initio</i>theory and floating-phase Heitler-London approach 2004 Belita Koiller
Rodrigo B. Capaz
Xuedong Hu
S. Das Sarma
1
+ PDF Chat Band structure related wave-function symmetry of amphoteric Si dopants in GaAs 2008 Sebastian Loth
M. Wenderoth
K. Teichmann
R. G. Ulbrich
1
+ PDF Chat Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus 2014 А. Н. Руденко
M. I. Katsnelson
1
+ PDF Chat Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy 2004 L. Oberbeck
Neil J. Curson
Toby Hallam
M. Y. Simmons
G. Bilger
Robert G. Clark
1
+ PDF Chat Experimental realization of a quantum algorithm 1998 Isaac L. Chuang
L. M. K. Vandersypen
Xinlan Zhou
Debbie Leung
Seth Lloyd
1
+ PDF Chat Approximate Quantum Counting on an NMR Ensemble Quantum Computer 1999 Jonathan A. Jones
Michele Mosca
1
+ PDF Chat Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zinc-blende semiconductor 2005 Jian‐Ming Tang
Michael E. Flatté
1
+ PDF Chat High-fidelity readout and control of a nuclear spin qubit in silicon 2013 J. Jarryd
Kuan Yen Tan
Juan Pablo Dehollain
Wee Han Lim
John J. L. Morton
Floris A. Zwanenburg
D.N. Jamieson
Andrew S. Dzurak
Andrea Morello
1
+ PDF Chat Density-functional study of LixMoS2 intercalates (0⩽x⩽1) 2012 Andrey N. Enyashin
Gotthard Seifert
1
+ PDF Chat Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers 2009 Tor Olof Strandberg
C. M. Canali
A. H. MacDonald
1
+ PDF Chat Multiband Tight-Binding Model of Local Magnetism in Ga1-xMnxAs 2004 Jian‐Ming Tang
Michael E. Flatté
1
+ PDF Chat Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-doped GaAs 2007 Sebastian Loth
M. Wenderoth
R. G. Ulbrich
S. Malzer
G. H. Döhler
1
+ PDF Chat Probing dark energy with supernovae: A concordant or a convergent model? 2004 J.-M. Virey
A. Ealet
C. Tao
A. Tilquin
A. Bonissent
D. Fouchez
P. Taxil
1
+ PDF Chat Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon 2009 Andrea Morello
Christopher C. Escott
Hans Huebl
L. H. Willems van Beveren
Lloyd C. L. Hollenberg
D.N. Jamieson
Andrew S. Dzurak
Robert G. Clark
1
+ PDF Chat Native point defects in few-layer phosphorene 2015 Vei Wang
Yoshiyuki Kawazoe
W. T. Geng
1
+ PDF Chat Observation of buried phosphorus dopants near clean<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>surfaces with scanning tunneling microscopy 2004 Geoffrey W. Brown
H. Grube
Marilyn E. Hawley
1
+ Visualizing the Charge Density Wave Transition in 2H-NbSe2 in Real Space 2013 S. P. Chockalingam
Carlos J. Arguello
Ethan Rosenthal
Linlin Zhao
Christopher Gutiérrez
Joon Ho Kang
Woo Chang Chung
Rafael M. Fernandes
Shuang Jia
Andrew J. Millis
1
+ PDF Chat STM Images of Subsurface Mn Atoms in GaAs: Evidence of Hybridization of Surface and Impurity States 2008 Jean‐Marc Jancu
J.-Ch. Girard
M. O. Nestoklon
A. Lemaı̂tre
Frank Glas
Z. Z. Wang
P. Voisin
1
+ PDF Chat Electric Field Effect in Atomically Thin Carbon Films 2004 Kostya S. Novoselov
A. K. Geǐm
С. В. Морозов
Da Jiang
Y. Zhang
S. V. Dubonos
I. V. Grigorieva
А. А. Firsov
1