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Steven R. Schofield
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All published works
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Year
Authors
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Roadmap on Atomic-scale Semiconductor Devices
2025
Steven R. Schofield
A. J. Fisher
Eran Ginossar
Joseph W. Lyding
Richard M. Silver
Fan Fei
Pradeep Namboodiri
Jonathan Wyrick
Mateus G. Masteghin
David Cox
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Roadmap on Atomic-scale Semiconductor Devices
2025
Steven R. Schofield
A. J. Fisher
Eran Ginossar
Joseph W. Lyding
Richard M. Silver
Fan Fei
Pradeep Namboodiri
Jonathan Wyrick
Mateus G. Masteghin
David Cox
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Element-specific, non-destructive profiling of layered heterostructures
2024
Nicolò D'Anna
Jamie Bragg
Elizabeth Skoropata
Nazaret Ortiz Hernández
Anne McConnell
Matthew Clemence
Hiroki Ueda
Procopios Constantinou
Kieran Spruce
Taylor J. Z. Stock
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Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication
2024
Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
David R. Bowler
Steven R. Schofield
Neil J. Curson
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Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon
2023
Procopios Constantinou
Taylor J. Z. Stock
Eleanor Crane
Alexander Kölker
Marcel van Loon
Juerong Li
Sarah Fearn
Henric Bornemann
Nicolò D'Anna
A. J. Fisher
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Resistless EUV lithography: Photon-induced oxide patterning on silicon
2023
Li‐Ting Tseng
Prajith Karadan
Dimitrios Kazazis
Procopios Constantinou
Taylor J. Z. Stock
Neil J. Curson
Steven R. Schofield
Matthias Muntwiler
G. Aeppli
Yasin Ekinci
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Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon
2023
Nicolò D'Anna
Darío Ferreira Sánchez
Guy Matmon
Jamie Bragg
Procopios Constantinou
Taylor J. Z. Stock
Sarah Fearn
Steven R. Schofield
Neil J. Curson
M. Bartkowiak
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Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
2023
Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
David R. Bowler
Steven R. Schofield
Neil J. Curson
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Room temperature donor incorporation for quantum devices: arsine on germanium
2022
Emily V. S. Hofmann
Taylor J. Z. Stock
Oliver Warschkow
Rebecca Conybeare
Neil J. Curson
Steven R. Schofield
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Non-destructive X-ray imaging of patterned delta-layer devices in silicon
2022
Nicolò D'Anna
Darío Ferreira Sánchez
Guy Matmon
Jamie Bragg
Procopios Constantinou
Taylor J. Z. Stock
Sarah Fearn
Steven R. Schofield
Neil J. Curson
M. Bartkowiak
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Substitutional Tin Acceptor States in Black Phosphorus
2021
M. Wentink
Julian Gaberle
Martik Aghajanian
Arash A. Mostofi
Neil J. Curson
Johannes Lischner
Steven R. Schofield
Alexander L. Shluger
Anthony J. Kenyon
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Charge Density Waves in Electron-Doped Molybdenum Disulfide
2021
Mohammed K. Bin Subhan
Asif Suleman
Gareth John Moore
Peter Phu
Moritz Hoesch
H. Kurebayashi
Christopher A. Howard
Steven R. Schofield
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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
2020
Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
2019
Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
2019
Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
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PDF
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Two- to three-dimensional crossover in a dense electron liquid in silicon
2018
Guy Matmon
Eran Ginossar
B. J. Villis
Alexander Kölker
Tingbin Lim
Hari S. Solanki
Steven R. Schofield
Neil J. Curson
Juerong Li
B. N. Murdin
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PDF
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Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory
2017
Veronika Brázdová
David R. Bowler
Kitiphat Sinthiptharakoon
Philipp Studer
Adam Rahnejat
Neil J. Curson
Steven R. Schofield
A. J. Fisher
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PDF
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Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1)
2014
Kane M. O’Donnell
Oliver Warschkow
Asif Suleman
Adam Fahy
Lars Thomsen
Steven R. Schofield
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Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
2013
Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
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PDF
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Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field
2013
M. Bozkurt
M. R. Mahani
Philipp Studer
Jian‐Ming Tang
Steven R. Schofield
Neil J. Curson
Michael E. Flatté
A. Yu. Silov
Cyrus F. Hirjibehedin
C. M. Canali
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Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
2013
Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
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Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
2013
Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
+
PDF
Chat
STM characterization of the Si-P heterodimer
2004
Neil J. Curson
Steven R. Schofield
M. Y. Simmons
L. Oberbeck
Jeremy L. O’Brien
Robert G. Clark
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Split-off dimer defects on the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:math>surface
2004
Steven R. Schofield
Neil J. Curson
Jeremy L. O’Brien
M. Y. Simmons
Robert G. Clark
Nigel A. Marks
Hugh F. Wilson
Geoffrey W. Brown
M. E. Hawley
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PDF
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Atomically Precise Placement of Single Dopants in Si
2003
Steven R. Schofield
Neil J. Curson
M. Y. Simmons
F. J. Rueß
Toby Hallam
L. Oberbeck
Robert G. Clark
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PDF
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Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
2002
L. Oberbeck
Neil J. Curson
M. Y. Simmons
R. Brenner
A. R. Hamilton
Steven R. Schofield
Robert G. Clark
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PDF
Chat
Towards the fabrication of phosphorus qubits for a silicon quantum computer
2001
Jeremy L. O’Brien
Steven R. Schofield
M. Y. Simmons
Robert G. Clark
Andrew S. Dzurak
Neil J. Curson
B. E. Kane
N.S. McAlpine
M. E. Hawley
Geoff W. Brown
Common Coauthors
Coauthor
Papers Together
Neil J. Curson
25
Taylor J. Z. Stock
13
Procopios Constantinou
12
M. Y. Simmons
7
G. Aeppli
7
Sarah Fearn
7
Oliver Warschkow
7
David R. Bowler
6
Robert G. Clark
5
Philipp Studer
5
Alexander Kölker
5
Juerong Li
5
A. J. Fisher
5
Nicolò D'Anna
4
Guy Matmon
4
Emily V. S. Hofmann
4
Cyrus F. Hirjibehedin
4
Kitiphat Sinthiptharakoon
4
Veronika Brázdová
4
Darío Ferreira Sánchez
3
Eleanor Crane
3
Daniel Grolimund
3
Yasin Ekinci
3
David R. McKenzie
3
Simon Gerber
3
L. Oberbeck
3
Jamie Bragg
3
Jeremy L. O’Brien
3
B. N. Murdin
3
Dimitrios Kazazis
3
Eran Ginossar
3
Joseph W. Lyding
2
Christopher Allemang
2
Mateus G. Masteghin
2
Alexander Jakob
2
Quinn Campbell
2
David N. Jamieson
2
David Cox
2
D. Spemann
2
Robert Butera
2
Jonathan Wyrick
2
Paul Räcke
2
Robert A. Wolkow
2
Evan M. Anderson
2
Andrea Morello
2
B. Voisin
2
Scott Schmucker
2
Holly G. Stemp
2
Tzu-Ming Lu
2
F. Schmidt–Kaler
2
Commonly Cited References
Action
Title
Year
Authors
# of times referenced
+
PDF
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Atomically Precise Placement of Single Dopants in Si
2003
Steven R. Schofield
Neil J. Curson
M. Y. Simmons
F. J. Rueß
Toby Hallam
L. Oberbeck
Robert G. Clark
7
+
PDF
Chat
Towards the fabrication of phosphorus qubits for a silicon quantum computer
2001
Jeremy L. O’Brien
Steven R. Schofield
M. Y. Simmons
Robert G. Clark
Andrew S. Dzurak
Neil J. Curson
B. E. Kane
N.S. McAlpine
M. E. Hawley
Geoff W. Brown
6
+
PDF
Chat
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
2002
L. Oberbeck
Neil J. Curson
M. Y. Simmons
R. Brenner
A. R. Hamilton
Steven R. Schofield
Robert G. Clark
5
+
PDF
Chat
Weak localization thickness measurements of Si:P delta-layers
2004
Dan Sullivan
B. E. Kane
Philip E. Thompson
4
+
PDF
Chat
Spatial Structure of an Individual Mn Acceptor in GaAs
2004
Andrei M. Yakunin
A. Yu. Silov
P. M. Koenraad
J. H. Wolter
W. Van Roy
J. De Boeck
Jian‐Ming Tang
Michael E. Flatté
4
+
PDF
Chat
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
2013
Kitiphat Sinthiptharakoon
Steven R. Schofield
Philipp Studer
Veronika Brázdová
Cyrus F. Hirjibehedin
David R. Bowler
Neil J. Curson
3
+
PDF
Chat
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
2020
Taylor J. Z. Stock
Oliver Warschkow
Procopios Constantinou
Juerong Li
Sarah Fearn
Eleanor Crane
Emily V. S. Hofmann
Alexander Kölker
David R. McKenzie
Steven R. Schofield
3
+
PDF
Chat
Spatially resolved resonant tunneling on single atoms in silicon
2015
B. Voisin
Joe Salfi
Juanita Bocquel
Rajib Rahman
Sven Rogge
2
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Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers
2018
Xiqiao Wang
Joseph A. Hagmann
Pradeep Namboodiri
Jonathan Wyrick
Kai Ming Li
Roy Murray
Alline F. Myers
Frederick Misenkosen
M. D. Stewart
Curt A. Richter
2
+
PDF
Chat
Two- to three-dimensional crossover in a dense electron liquid in silicon
2018
Guy Matmon
Eran Ginossar
B. J. Villis
Alexander Kölker
Tingbin Lim
Hari S. Solanki
Steven R. Schofield
Neil J. Curson
Juerong Li
B. N. Murdin
2
+
PDF
Chat
Extended Hubbard model for mesoscopic transport in donor arrays in silicon
2017
Nguyen H. Le
A. J. Fisher
Eran Ginossar
2
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PDF
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Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures
2000
R. B. Vrijen
Eli Yablonovitch
Kang Wang
Hong Wen Jiang
A. A. Balandin
Vwani Roychowdhury
Tal Mor
David P. DiVincenzo
2
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PDF
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Silicon quantum electronics
2013
Floris A. Zwanenburg
Andrew S. Dzurak
Andrea Morello
M. Y. Simmons
Lloyd C. L. Hollenberg
Gerhard Klimeck
Sven Rogge
S. N. Coppersmith
M. A. Eriksson
2
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Quantum simulation of the Hubbard model with dopant atoms in silicon
2016
Joe Salfi
Jan A. Mol
Rajib Rahman
Gerhard Klimeck
M. Y. Simmons
Lloyd C. L. Hollenberg
Sven Rogge
2
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PDF
Chat
STM characterization of the Si-P heterodimer
2004
Neil J. Curson
Steven R. Schofield
M. Y. Simmons
L. Oberbeck
Jeremy L. O’Brien
Robert G. Clark
2
+
PDF
Chat
Coherent control of Rydberg states in silicon
2010
P. T. Greenland
Stephen A. Lynch
A. F. G. van der Meer
B. N. Murdin
C. R. Pidgeon
Britta Redlich
N. Q. Vinh
G. Aeppli
2
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Phase diagram of electron-doped dichalcogenides
2014
Malte Rösner
Stephan Haas
T. O. Wehling
1
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Effective mass theory of monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>doping in the high-density limit
2012
Daniel W. Drumm
Lloyd C. L. Hollenberg
M. Y. Simmons
Mark Friesen
1
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Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions
2006
Dale Kitchen
Anthony Richardella
Jian‐Ming Tang
Michael E. Flatté
Ali Yazdani
1
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Optically Probing the Fine Structure of a Single Mn Atom in an InAs Quantum Dot
2007
A. Kudelski
A. Lemaı̂tre
A. Miard
P. Voisin
T.C.M. Graham
Richard J. Warburton
O. Krebs
1
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Theory of one and two donors in silicon
2015
André Saraiva
Alejandra Baena
M. J. Calderón
Belita Koiller
1
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Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors
2005
T. Jungwirth
Kai Wang
J. Mas̆ek
K. W. Edmonds
Jürgen König
Jairo Sinova
Marco Polini
N. A. Goncharuk
A. H. MacDonald
M. Sawicki
1
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Black Phosphorus: Narrow Gap, Wide Applications
2015
Andrés Castellanos-Gómez
1
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PDF
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Dimensional crossover of weak localization in a magnetic field
1997
C. Mauz
Achim Rosch
P. Wölfle
1
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PDF
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Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te-doped GaAs single crystals
1999
A. Depuydt
C. Van Haesendonck
N. S. Maslova
V. I. Panov
S. V. Savinov
P. I. Arseev
1
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Quantum control of proximal spins using nanoscale magnetic resonance imaging
2011
M. S. Grinolds
Patrick Maletinsky
Sungkun Hong
Mikhail D. Lukin
Ronald L. Walsworth
Amir Yacoby
1
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High-resolution soft X-ray beamline ADRESS at the Swiss Light Source for resonant inelastic X-ray scattering and angle-resolved photoelectron spectroscopies
2010
Vladimir N. Strocov
Thorsten Schmitt
U. Flechsig
Thomas Schmidt
A. Imhof
Q. Chen
Jörg Raabe
R. Betemps
D. Zimoch
Juraj Krempaský
1
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Strain-Induced Gap Modification in Black Phosphorus
2014
Aleksandr Rodin
Alexandra Carvalho
A. H. Castro Neto
1
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Anisotropic exchange interactions in III-V diluted magnetic semiconductors
2005
Carsten Timm
A. H. MacDonald
1
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Inelastic scattering in a monolayer graphene sheet: A weak-localization study
2008
Dong‐Keun Ki
Dongchan Jeong
Jaehyun Choi
Hu-Jong Lee
Kee-Su Park
1
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Atomically Thin<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>: A New Direct-Gap Semiconductor
2010
Kin Fai Mak
Changgu Lee
James Hone
Jie Shan
Tony F. Heinz
1
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Shallow-donor wave functions and donor-pair exchange in silicon:<i>Ab initio</i>theory and floating-phase Heitler-London approach
2004
Belita Koiller
Rodrigo B. Capaz
Xuedong Hu
S. Das Sarma
1
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Band structure related wave-function symmetry of amphoteric Si dopants in GaAs
2008
Sebastian Loth
M. Wenderoth
K. Teichmann
R. G. Ulbrich
1
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Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
2014
А. Н. Руденко
M. I. Katsnelson
1
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Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy
2004
L. Oberbeck
Neil J. Curson
Toby Hallam
M. Y. Simmons
G. Bilger
Robert G. Clark
1
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Experimental realization of a quantum algorithm
1998
Isaac L. Chuang
L. M. K. Vandersypen
Xinlan Zhou
Debbie Leung
Seth Lloyd
1
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Approximate Quantum Counting on an NMR Ensemble Quantum Computer
1999
Jonathan A. Jones
Michele Mosca
1
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Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zinc-blende semiconductor
2005
Jian‐Ming Tang
Michael E. Flatté
1
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PDF
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High-fidelity readout and control of a nuclear spin qubit in silicon
2013
J. Jarryd
Kuan Yen Tan
Juan Pablo Dehollain
Wee Han Lim
John J. L. Morton
Floris A. Zwanenburg
D.N. Jamieson
Andrew S. Dzurak
Andrea Morello
1
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Density-functional study of LixMoS2 intercalates (0⩽x⩽1)
2012
Andrey N. Enyashin
Gotthard Seifert
1
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Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
2009
Tor Olof Strandberg
C. M. Canali
A. H. MacDonald
1
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Multiband Tight-Binding Model of Local Magnetism in Ga1-xMnxAs
2004
Jian‐Ming Tang
Michael E. Flatté
1
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Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-doped GaAs
2007
Sebastian Loth
M. Wenderoth
R. G. Ulbrich
S. Malzer
G. H. Döhler
1
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Probing dark energy with supernovae: A concordant or a convergent model?
2004
J.-M. Virey
A. Ealet
C. Tao
A. Tilquin
A. Bonissent
D. Fouchez
P. Taxil
1
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Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
2009
Andrea Morello
Christopher C. Escott
Hans Huebl
L. H. Willems van Beveren
Lloyd C. L. Hollenberg
D.N. Jamieson
Andrew S. Dzurak
Robert G. Clark
1
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Native point defects in few-layer phosphorene
2015
Vei Wang
Yoshiyuki Kawazoe
W. T. Geng
1
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Observation of buried phosphorus dopants near clean<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>surfaces with scanning tunneling microscopy
2004
Geoffrey W. Brown
H. Grube
Marilyn E. Hawley
1
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Visualizing the Charge Density Wave Transition in 2H-NbSe2 in Real Space
2013
S. P. Chockalingam
Carlos J. Arguello
Ethan Rosenthal
Linlin Zhao
Christopher Gutiérrez
Joon Ho Kang
Woo Chang Chung
Rafael M. Fernandes
Shuang Jia
Andrew J. Millis
1
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STM Images of Subsurface Mn Atoms in GaAs: Evidence of Hybridization of Surface and Impurity States
2008
Jean‐Marc Jancu
J.-Ch. Girard
M. O. Nestoklon
A. Lemaı̂tre
Frank Glas
Z. Z. Wang
P. Voisin
1
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Electric Field Effect in Atomically Thin Carbon Films
2004
Kostya S. Novoselov
A. K. Geǐm
С. В. Морозов
Da Jiang
Y. Zhang
S. V. Dubonos
I. V. Grigorieva
А. А. Firsov
1