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Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-doped GaAs
The electronic properties of shallow acceptors in $p$-doped GaAs{110} are investigated with scanning tunneling microscopy (STM) at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved $I(V)$ spectroscopy is performed to identify their energetic origin and behavior. A crucial …