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Lily Stanley
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All published works
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Low-Temperature 2D/2D Ohmic Contacts in WSe<sub>2</sub> Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition
2021
Lily Stanley
Hsun‐Jen Chuang
Zhixian Zhou
Michael Köehler
Jiaqiang Yan
David Mandrus
Dragana Popović
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Screening the Coulomb interaction leads to a prethermal regime in two-dimensional bad conductors
2021
Lily Stanley
Ping Lin
J. Jaroszyński
Dragana Popović
Common Coauthors
Coauthor
Papers Together
Dragana Popović
2
Hsun‐Jen Chuang
1
Jiaqiang Yan
1
Michael Köehler
1
Ping Lin
1
Zhixian Zhou
1
David Mandrus
1
J. Jaroszyński
1
Commonly Cited References
Action
Title
Year
Authors
# of times referenced
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Glassy Dynamics of Electrons Near the Metal–Insulator Transition
2012
Dragana Popović
2
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PDF
Chat
Critical Behavior of a Strongly Disordered 2D Electron System: The Cases of Long-Range and Screened Coulomb Interactions
2015
Ping Lin
Dragana Popović
2
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PDF
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Onset of Glassy Dynamics in a Two-Dimensional Electron System in Silicon
2002
S. Bogdanovich
Dragana Popović
2
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PDF
Chat
<i>Colloquium</i>: Transport in strongly correlated two dimensional electron fluids
2010
B. Spivak
S. V. Kravchenko
Steven A. Kivelson
Xuan Gao
1
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PDF
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High-Mobility Holes in Dual-Gated WSe<sub>2</sub> Field-Effect Transistors
2015
Hema C. P. Movva
Amritesh Rai
Sangwoo Kang
Kyounghwan Kim
Babak Fallahazad
Takashi Taniguchi
Kenji Watanabe
Emanuel Tutuc
Sanjay K. Banerjee
1
+
PDF
Chat
Many-body physics with ultracold gases
2008
Immanuel Bloch
Jean Dalibard
W. Zwerger
1
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PDF
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Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
2013
Han Liu
Mengwei Si
Yexin Deng
Adam T. Neal
Yuchen Du
Sina Najmaei
Pulickel M. Ajayan
Jun Lou
Peide D. Ye
1
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PDF
Chat
Effects of a Parallel Magnetic Field on the Metal-Insulator Transition in a Dilute Two-Dimensional Electron System
2002
Kevin Eng
Xiao-Yong Feng
Dragana Popović
S. Washburn
1
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PDF
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Self-Organized Criticality in Glassy Spin Systems Requires a Diverging Number of Neighbors
2013
Juan Carlos Andresen
Zheng Zhu
Ruben S. Andrist
Helmut G. Katzgraber
V. Dobrosavljević
Gergely T. Zimányi
1
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PDF
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Disorder-Induced Localization in a Strongly Correlated Atomic Hubbard Gas
2015
Stanimir Kondov
William McGehee
Wenchao Xu
Brian DeMarco
1
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Interacting Electrons in Disordered Wires: Anderson Localization and Low-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>T</mml:mi></mml:math>Transport
2005
I. V. Gornyi
A. D. Mirlin
D. G. Polyakov
1
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PDF
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Black phosphorus field-effect transistors
2014
Likai Li
Yijun Yu
Guo Jun Ye
Q. Q. Ge
Xuedong Ou
Hua Wu
Donglai Feng
Xian Hui Chen
Yuanbo Zhang
1
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PDF
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Glassy Behavior of Electrons Near Metal-Insulator Transitions
2003
V. Dobrosavljević
D. Tanasković
A. A. Pastor
1
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PDF
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Thermalization processes in interacting Anderson insulators
2015
Z. Ovadyahu
1
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PDF
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Mobility engineering and a metal–insulator transition in monolayer MoS2
2013
Branimir Radisavljevic
András Kis
1
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Novel Metallic Behavior in Two Dimensions
2001
Xiao Feng
Dragana Popović
S. Washburn
V. Dobrosavljević
1
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PDF
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Aging Effects across the Metal-Insulator Transition in Two Dimensions
2007
J. Jaroszyński
Dragana Popović
1
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PDF
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Metal-Insulator Transition at<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">B</mml:mi><mml:mspace /><mml:mo>=</mml:mo><mml:mspace /><mml:mn>0</mml:mn><mml:mn /></mml:math>in a Dilute Two Dimensional GaAs-AlGaAs Hole Gas
1998
M. Y. Simmons
A. R. Hamilton
M. Pepper
E. H. Linfield
P. D. Rose
D. A. Ritchie
A. K. Savchenko
Tom Griffiths
1
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PDF
Chat
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
2015
Nihar Pradhan
Daniel Rhodes
Shahriar Memaran
Jean-Marie Poumirol
Dmitry Smirnov
Saikat Talapatra
Simin Feng
Néstor Perea‐López
Ana Laura Elías
Mauricio Terrones
1
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PDF
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High Mobility WSe<sub>2</sub> p<i>-</i> and n<i>-</i>Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
2014
Hsun‐Jen Chuang
Xuebin Tan
N. Ghimire
Meeghage Madusanka Perera
Bhim Chamlagain
Mark Ming‐Cheng Cheng
Jiaqiang Yan
David Mandrus
David Tománek
Zhixian Zhou
1
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PDF
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High-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts
2012
Hui Fang
Steven S.C. Chuang
Ting Chia Chang
Kuniharu Takei
Toshitake Takahashi
Ali Javey
1
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PDF
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Metallic behavior and related phenomena in two dimensions
2001
Elihu Abrahams
S. V. Kravchenko
M. P. Sarachik
1
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PDF
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Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon
2006
J. Jaroszyński
Dragana Popović
1
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PDF
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Nonequilibrium Relaxations and Aging Effects in a Two-Dimensional Coulomb Glass
2007
J. Jaroszyński
Dragana Popović
1
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PDF
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Suppression of Inelastic Electron-Electron Scattering in Anderson Insulators
2012
Z. Ovadyahu
1
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PDF
Chat
Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions
1999
Xiao Feng
Dragana Popović
S. Washburn
1
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PDF
Chat
Coupling Identical one-dimensional Many-Body Localized Systems
2016
Pranjal Bordia
Henrik P. Lüschen
S. S. Hodgman
Michael Schreiber
Immanuel Bloch
Ulrich Schneider
1
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PDF
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Transport Properties of Monolayer MoS<sub>2</sub> Grown by Chemical Vapor Deposition
2014
Hennrik Schmidt
Shunfeng Wang
Leiqiang Chu
Minglin Toh
Rajeev Kumar
Weijie Zhao
A. H. Castro Neto
Jens Martin
Shaffique Adam
Barbaros Özyilmaz
1
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Quantum quenches in the many-body localized phase
2014
Maksym Serbyn
Zlatko Papić
Dmitry A. Abanin
1
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PDF
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Metal-Insulator Transition in a 2D Electron Gas: Equivalence of Two Approaches for Determining the Critical Point
2001
A. A. Shashkin
S. V. Kravchenko
T. M. Klapwijk
1
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Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers
2002
J. Jaroszyński
Dragana Popović
T. M. Klapwijk
1
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PDF
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Metal to Insulator Quantum-Phase Transition in Few-Layered ReS<sub>2</sub>
2015
Nihar Pradhan
Amber McCreary
Daniel Rhodes
Zhengguang Lu
Simin Feng
Efstratios Manousakis
Dmitry Smirnov
Raju R. Namburu
Madan Dubey
Angela R. Hight Walker
1
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Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe<sub>2</sub>, MoS<sub>2</sub>, and MoSe<sub>2</sub> Transistors
2016
Hsun‐Jen Chuang
Bhim Chamlagain
Michael Köehler
Meeghage Madusanka Perera
Jiaqiang Yan
David Mandrus
David Tománek
Zhixian Zhou
1
+
PDF
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Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Landau Level Degeneracy, Effective Mass, and Negative Compressibility
2016
Babak Fallahazad
Hema C. P. Movva
Kyounghwan Kim
Stefano Larentis
Takashi Taniguchi
Kenji Watanabe
Sanjay K. Banerjee
Emanuel Tutuc
1
+
PDF
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MoS<sub>2</sub> P-type Transistors and Diodes Enabled by High Work Function MoO<sub><i>x</i></sub> Contacts
2014
Steven S.C. Chuang
Corsin Battaglia
Angelica Azcatl
Stephen McDonnell
Jeong Seuk Kang
Xingtian Yin
Mahmut Tosun
Rehan Kapadia
Hui Fang
Robert M. Wallace
1
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Exploring the many-body localization transition in two dimensions
2016
Jae-yoon Choi
Sebastian Hild
Johannes Zeiher
Peter Schauß
Antonio Rubio-Abadal
Tarik Yefsah
Vedika Khemani
David A. Huse
Immanuel Bloch
Christian Groß
1
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Improved Contacts to MoS<sub>2</sub> Transistors by Ultra-High Vacuum Metal Deposition
2016
Chris English
Gautam Shine
Vincent E. Dorgan
Krishna C. Saraswat
Eric Pop
1
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Observation of a discrete time crystal
2017
J. Zhang
Paul Hess
A. Kyprianidis
Patrick Becker
A. Lee
Jeremy M. Smith
Guido Pagano
Ionut-Dragos Potirniche
Andrew C. Potter
Ashvin Vishwanath
1
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Signatures of Many-Body Localization in a Controlled Open Quantum System
2017
Henrik P. Lüschen
Pranjal Bordia
S. S. Hodgman
Michael Schreiber
Saubhik Sarkar
Andrew J. Daley
Mark H. Fischer
Ehud Altman
Immanuel Bloch
Ulrich Schneider
1
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Observation of discrete time-crystalline order in a disordered dipolar many-body system
2017
Soonwon Choi
Joonhee Choi
Renate Landig
Georg Kucsko
Hengyun Zhou
Junichi Isoya
Fedor Jelezko
Shinobu Onoda
Hitoshi Sumiya
Vedika Khemani
1
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Thermalization and prethermalization in isolated quantum systems: a theoretical overview
2018
Takashi Mori
Tatsuhiko N. Ikeda
Eriko Kaminishi
Masahito Ueda
1
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Many-body localization transition with power-law interactions: Statistics of eigenstates
2018
K. S. Tikhonov
A. D. Mirlin
1
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Excessive noise as a test for many-body localization
2019
Idan Tamir
T. Levinson
F. Gorniaczyk
A. Doron
J. Lieb
D. Shahar
1
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Instability of many-body localized systems as a phase transition in a nonstandard thermodynamic limit
2019
Sarang Gopalakrishnan
David A. Huse
1
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<i>Colloquium</i> : Many-body localization, thermalization, and entanglement
2019
Dmitry A. Abanin
Ehud Altman
Immanuel Bloch
Maksym Serbyn
1
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Screening the Coulomb interaction and thermalization of Anderson insulators
2019
Z. Ovadyahu
1
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PDF
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Immunity to Contact Scaling in MoS<sub>2</sub> Transistors Using in Situ Edge Contacts
2019
Zhihui Cheng
Yifei Yu
Shreya Singh
Katherine Price
Steven G. Noyce
Yuh-Chen Lin
Linyou Cao
Aaron D. Franklin
1
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PDF
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Mobility Improvement and Temperature Dependence in MoSe<sub>2</sub> Field-Effect Transistors on Parylene-C Substrate
2014
Bhim Chamlagain
Qing Li
N. Ghimire
Hsun‐Jen Chuang
Meeghage Madusanka Perera
Honggen Tu
Yong Xu
Minghu Pan
Di Xaio
Jiaqiang Yan
1
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One-Dimensional Edge Contacts to a Monolayer Semiconductor
2019
Achint Jain
Áron Szabó
Markus Parzefall
E. Bonvin
Takashi Taniguchi
Kenji Watanabe
Palash Bharadwaj
Mathieu Luisier
Lukáš Novotný
1
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Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
2020
Byoung Hee Moon
Gang Hee Han
Miloš Radonjić
Hyunjin Ji
V. Dobrosavljević
1