High-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts
High-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts
We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) …