Immunity to Contact Scaling in MoS<sub>2</sub> Transistors Using in Situ Edge Contacts
Immunity to Contact Scaling in MoS<sub>2</sub> Transistors Using in Situ Edge Contacts
Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostatic gate control. Properly scaling a transistor technology requires reducing both the channel length (distance from source to drain) and the contact length (distance that source and …