Prefer a chat interface with context about you and your work?
High Mobility WSe<sub>2</sub> p<i>-</i> and n<i>-</i>Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close to the quantum conductance e2/h, a high ON/OFF ratio of …