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Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al <sub>x</sub> Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterostructure channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy

Type: Article

Publication Date: 2020-12-23

Citations: 50

DOI: https://doi.org/10.35848/1882-0786/abd675

Abstract

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{\Omega}/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.

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