Daniel Feezell

Generating author description...

All published works

Action	Title	Year	Authors
+ PDF Chat	Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution	2024	Xuefeng Li Elizabeth DeJong Rob Armitage Daniel Feezell
+	Multiple-Carrier-Lifetime Model for Carrier Dynamics in InGaN/GaN LEDs with Non-Uniform Carrier Distribution	2023	Xuefeng Li Elizabeth DeJong Rob Armitage Daniel Feezell
+ PDF Chat	Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes	2022	Nick Pant Xuefeng Li Elizabeth DeJong Daniel Feezell Rob Armitage Emmanouil Kioupakis
+	Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures	2022	Norman A. Sanford Paul T. Blanchard Matthew D. Brubaker Ashwin K. Rishinaramangalam Qihua Zhang Alexana Roshko Daniel Feezell Benjamin D B Klein Albert V. Davydov
+	Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes	2022	Nick Pant Xuefeng Li Elizabeth DeJong Daniel Feezell Rob Armitage Emmanouil Kioupakis
+ PDF Chat	Delta-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films and <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterostructures grown by metalorganic vapor-phase epitaxy	2020	Praneeth Ranga Arkka Bhattacharyya Ashwin K. Rishinaramangalam Yu Kee Ooi Michael A. Scarpulla Daniel Feezell Sriram Krishnamoorthy
+	Si-doped <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by metalorganic vapor-phase epitaxy	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy
+ PDF Chat	MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy
+	Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients	2017	Morteza Monavarian Arman Rashidi Andrew Aragon Sang Ho Oh Mohsen Nami Steven P. DenBaars Daniel Feezell

Common Coauthors

Coauthor	Papers Together
Elizabeth DeJong	4
Rob Armitage	4
Ashwin K. Rishinaramangalam	4
Xuefeng Li	4
Praneeth Ranga	3
Arkka Bhattacharyya	3
Sriram Krishnamoorthy	3
Joel B. Varley	2
Emmanouil Kioupakis	2
Nick Pant	2
Yu Kee Ooi	1
Andrew Aragon	1
Arman Rashidi	1
Qihua Zhang	1
Morteza Monavarian	1
Michael A. Scarpulla	1
Sang Ho Oh	1
Albert V. Davydov	1
Benjamin D B Klein	1
Matthew D. Brubaker	1
Alexana Roshko	1
Paul T. Blanchard	1
Norman A. Sanford	1
Steven P. DenBaars	1
Mohsen Nami	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Electron mobility in monoclinic β-Ga<sub>2</sub>O<sub>3</sub>—Effect of plasmon-phonon coupling, anisotropy, and confinement	2017	Krishnendu Ghosh Uttam Singisetti	3
+ PDF Chat	Intrinsic electron mobility limits in <i>β</i>-Ga2O3	2016	Nan Ma Nicholas Tanen Amit Verma Zhi Guo Tengfei Luo Huili Grace Xing Debdeep Jena	3
+ PDF Chat	Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap	2019	Aurélien David Nathan G. Young Christophe A. Hurni Michael D. Craven	2
+	Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor	2017	Sriram Krishnamoorthy Zhanbo Xia Chandan Joishi Yuewei Zhang Joe F. McGlone Jared M. Johnson Mark Brenner Aaron R. Arehart Jinwoo Hwang Saurabh Lodha	2
+ PDF Chat	Polar ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>In</mml:mi></mml:math> , <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ga</mml:mi></mml:math> ) <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow></mml:math> / <mml:math xmlns:mml="http://www.w3.org/1998/Math/…	2020	Daniel S. P. Tanner P. Dawson M. J. Kappers Rachel A. Oliver Stefan Schulz	2
+ PDF Chat	Projector augmented-wave method	1994	Peter E. Blöchl	2
+ PDF Chat	Spontaneous polarization and piezoelectric constants of III-V nitrides	1997	Fabio Bernardini Vincenzo Fiorentini David Vanderbilt	1
+ PDF Chat	Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides	2016	Cyrus E. Dreyer Anderson Janotti Chris G. Van de Walle David Vanderbilt	1
+ PDF Chat	Theory of electron-plasmon coupling in semiconductors	2016	Fabio Caruso Feliciano Giustino	1
+ PDF Chat	Delta-doped β-gallium oxide field-effect transistor	2017	Sriram Krishnamoorthy Zhanbo Xia Sanyam Bajaj Mark Brenner Siddharth Rajan	1
+ PDF Chat	MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy	1
+	High electron density ${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doping using ultra-thin (1 nm) spacer layer	2019	Nidhin Kurian Kalarickal Zhanbo Xia Joe F. McGlone Yumo Liu Wyatt Moore Aaron R. Arehart S. A. Ringel Siddharth Rajan	1
+ PDF Chat	Many-Body Effects in Strongly Disordered III-Nitride Quantum Wells: Interplay Between Carrier Localization and Coulomb Interaction	2019	Aurélien David Nathan G. Young Michael D. Craven	1
+	Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients	2017	Morteza Monavarian Arman Rashidi Andrew Aragon Sang Ho Oh Mohsen Nami Steven P. DenBaars Daniel Feezell	1
+ PDF Chat	Vibrational and electron-phonon coupling properties of β-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field	2019	Kelsey Mengle Emmanouil Kioupakis	1
+	Si-doped <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by metalorganic vapor-phase epitaxy	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy	1
+ PDF Chat	High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes	2014	Wan Sik Hwang Amit Verma Hartwin Peelaers Vladimir Protasenko Sergei Rouvimov Huili Grace Xing Alan Seabaugh Wilfried Haensch Chris G. Van de Walle Zbigniew Galazka	1
+ PDF Chat	Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells	2022	Cheng-Han Ho James S. Speck Claude Weisbuch Yuh‐Renn Wu	1
+ PDF Chat	First-principles calculations of indirect Auger recombination in nitride semiconductors	2015	Emmanouil Kioupakis Daniel Steiauf Patrick Rinke Kris T. Delaney Chris G. Van de Walle	1
+	High electron density $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doping using ultra-thin (1 nm) spacer layer	2019	Nidhin Kurian Kalarickal Zhanbo Xia Joe F. McGlone Yumo Liu Wyatt Moore Aaron R. Arehart S. A. Ringel Siddharth Rajan	1
+ PDF Chat	Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN	2015	Hong Li Lutz Geelhaar Henning Riechert Claudia Draxl	1
+ PDF Chat	Efficiency Drop in Green<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>InGaN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:mrow></mml:math>Light Emitting Diodes: The Role of Random Alloy Fluctuations	2016	Matthias Auf der Maur Alessandro Pecchia Gabriele Penazzi Walter Rodrigues Aldo Di Carlo	1
+ PDF Chat	Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop	2013	Justin Iveland Lucio Martinelli Jacques Peretti James S. Speck Claude Weisbuch	1
+ PDF Chat	Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells	2015	Stefan Schulz A. Miguel Conor Coughlan Eoin P. O’Reilly	1
+ PDF Chat	Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN	2008	Patrick Rinke M. Winkelnkemper A. Qteish D. Bimberg Jörg Neugebauer Matthias Scheffler	1