Zixuan Feng

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All published works

Action	Title	Year	Authors
+	Representation theory in the construction of free quantum field	2023	Zixuan Feng
+	Spin Statistics and Field Equations for any Spin	2023	Zixuan Feng
+	MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates	2022	A F M Anhar Uddin Bhuiyan Zixuan Feng Hsien‐Lien Huang Lingyu Meng Jinwoo Hwang Hongping Zhao
+ PDF Chat	Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride	2021	Yuxuan Zhang Zhaoying Chen Kaitian Zhang Zixuan Feng Hongping Zhao
+	Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off	2021	Yixiong Zheng Zixuan Feng A F M Anhar Uddin Bhuiyan Lingyu Meng Samyak Dhole Q. X. Jia Hongping Zhao Jung‐Hun Seo
+ PDF Chat	Direct observation of site-specific dopant substitution in Si doped (Al <sub>x</sub> Ga<sub>1</sub>− <sub>x</sub> )<sub>2</sub>O<sub>3</sub> via atom probe tomography	2021	Jith Sarker A F M Anhar Uddin Bhuiyan Zixuan Feng Hongping Zhao Baishakhi Mazumder
+ PDF Chat	Large-size free-standing single-crystal β-Ga<sub>2</sub>O<sub>3</sub> membranes fabricated by hydrogen implantation and lift-off	2021	Yixiong Zheng Zixuan Feng A F M Anhar Uddin Bhuiyan Lingyu Meng Samyak Dhole Q. X. Jia Hongping Zhao Jung‐Hun Seo
+ PDF Chat	Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors	2020	Nidhin Kurian Kalarickal Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Wyatt Moore Joe F. McGlone Aaron R. Arehart Steven A. Ringel Hongping Zhao Siddharth Rajan
+	Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography	2020	Jith Sarker A F M Anhar Uddin Bhuiyan Zixuan Feng Hongping Zhao Baishakhi Mazumder
+	Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors	2020	Nidhin Kurian Kalarickal Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Joe F. McGlone Wyatt Moore Aaron R. Arehart Steven A. Ringel Hongping Zhao Siddharth Rajan
+	Probing charge transport and background doping in MOCVD grown (010) ${\beta}$-Ga$_{2}$O$_{3}$	2020	Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Wyatt Moore Zhaoying Chen Joe F. McGlone David R. Daughton Aaron R. Arehart Steven A. Ringel Siddharth Rajan
+	Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography	2020	Jith Sarker A F M Anhar Uddin Bhuiyan Zixuan Feng Hongping Zhao Baishakhi Mazumder
+	Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors	2020	Nidhin Kurian Kalarickal Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Joe F. McGlone Wyatt Moore Aaron R. Arehart Steven A. Ringel Hongping Zhao Siddharth Rajan
+	Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$	2020	Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Wyatt Moore Zhaoying Chen Joe F. McGlone David R. Daughton Aaron R. Arehart Steven A. Ringel Siddharth Rajan

Common Coauthors

Coauthor	Papers Together
Hongping Zhao	12
A F M Anhar Uddin Bhuiyan	11
Steven A. Ringel	5
Zhanbo Xia	5
Siddharth Rajan	5
Wyatt Moore	5
Joe F. McGlone	5
Aaron R. Arehart	5
Zhaoying Chen	3
Baishakhi Mazumder	3
Nidhin Kurian Kalarickal	3
Jith Sarker	3
Yixiong Zheng	2
Jung‐Hun Seo	2
Samyak Dhole	2
Q. X. Jia	2
Lingyu Meng	2
David R. Daughton	2
Kaitian Zhang	1
Yuxuan Zhang	1
Jinwoo Hwang	1
Lingyu Meng	1
Hsien‐Lien Huang	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Intrinsic electron mobility limits in <i>β</i>-Ga2O3	2016	Nan Ma Nicholas Tanen Amit Verma Zhi Guo Tengfei Luo Huili Grace Xing Debdeep Jena	3
+ PDF Chat	High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm	2016	Hong Zhou Mengwei Si Sami Alghamdi Gang Qiu Lingming Yang Peide D. Ye	2
+ PDF Chat	Metal/BaTiO<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> dielectric heterojunction diode with 5.7 MV/cm breakdown field	2019	Zhanbo Xia Hareesh Chandrasekar Wyatt Moore Caiyu Wang Aidan J. Lee Joe F. McGlone Nidhin Kurian Kalarickal Aaron R. Arehart Steven A. Ringel Fengyuan Yang	2
+ PDF Chat	High-field conduction in barium titanate	2005	Finlay D. Morrison Pavlo Zubko Dong-Hoon Jung J. F. Scott Paul N. W. Baxter M. Saad R. M. Bowman J. M. Gregg	1
+	Si-doped <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by metalorganic vapor-phase epitaxy	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy	1
+ PDF Chat	β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect	2017	Hong Zhou Kerry Maize Gang Qiu Ali Shakouri Peide D. Ye	1
+ PDF Chat	MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy	1
+ PDF Chat	Electrical and optical properties of heavily Ge-doped AlGaN	2019	Rodrigo Blasco Akhil Ajay Éric Robin Catherine Bougerol K Lorentz L.C. Alves Isabelle Mouton Lynda Amichi Adeline Grenier E. Monroy	1