William D. McCulloch

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All published works

Action	Title	Year	Authors
+ PDF Chat	High current density 2D/3D MoS<sub>2</sub>/GaN Esaki tunnel diodes	2016	Sriram Krishnamoorthy Edwin W. Lee Choong Hee Lee Yuewei Zhang William D. McCulloch Jared M. Johnson Jinwoo Hwang Yiying Wu Siddharth Rajan
+ PDF Chat	Layer-transferred MoS2/GaN PN diodes	2015	Edwin W. Lee Choong Hee Lee Pran K. Paul Lu Ma William D. McCulloch Sriram Krishnamoorthy Yiying Wu Aaron R. Arehart Siddharth Rajan

Common Coauthors

Coauthor	Papers Together
Choong Hee Lee	2
Siddharth Rajan	2
Edwin W. Lee	2
Yiying Wu	2
Sriram Krishnamoorthy	2
Aaron R. Arehart	1
Yuewei Zhang	1
Lu Ma	1
Jinwoo Hwang	1
Pran K. Paul	1
Jared M. Johnson	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1	2014	Lu Ma Digbijoy N. Nath Edwin W. Lee Choong Hee Lee Mingzhe Yu Aaron R. Arehart Siddharth Rajan Yiying Wu	2
+ PDF Chat	Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment	2015	Rusen Yan Sara Fathipour Yimo Han Bo Song Shudong Xiao Mingda Li Nan Ma Vladimir Protasenko David A. Muller Debdeep Jena	1
+ PDF Chat	Integrated Circuits Based on Bilayer MoS<sub>2</sub> Transistors	2012	Han Wang Lili Yu Yi‐Hsien Lee Yumeng Shi Allen Hsu Matthew L. Chin Lain‐Jong Li Madan Dubey Jing Kong Tomás Palacios	1
+ PDF Chat	Vapor–Solid Growth of High Optical Quality MoS<sub>2</sub> Monolayers with Near-Unity Valley Polarization	2013	Sanfeng Wu Chun-Ming Huang Grant Aivazian Jason Ross David Cobden Xiaodong Xu	1
+ PDF Chat	Atomically thin p–n junctions with van der Waals heterointerfaces	2014	Chul‐Ho Lee Gwan‐Hyoung Lee Arend M. van der Zande Wenchao Chen Yilei Li Minyong Han Xu Cui Ghidewon Arefe Colin Nuckolls Tony F. Heinz	1
+ PDF Chat	High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector	2013	Mohammad R. Esmaeili-Rad Sayeef Salahuddin	1
+ PDF Chat	Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors	2011	Leitao Liu S. Bala Kumar Yijian Ouyang Jing Guo	1
+ PDF Chat	$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric	2012	Han Liu Peide D. Ye	1
+ PDF Chat	Spontaneous polarization and piezoelectric constants of III-V nitrides	1997	Fabio Bernardini Vincenzo Fiorentini David Vanderbilt	1
+ PDF Chat	Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate	2012	Yongjie Zhan Zheng Liu Sina Najmaei Pulickel M. Ajayan Jun Lou	1
+ PDF Chat	Monolayer MoS 2 /GaAs heterostructure self-driven photodetector with extremely high detectivity	2016	Zhijuan Xu Shisheng Lin Xiaoqiang Li Shengjiao Zhang Zhiqian Wu Wenli Xu Yanghua Lu Sen Xu	1
+ PDF Chat	Large area single crystal (0001) oriented MoS2	2013	Masihhur R. Laskar Lu Ma Santhakumar Kannappan Pil Sung Park Sriram Krishnamoorthy Digbijoy N. Nath Wu Lu Yiying Wu Siddharth Rajan	1
+ PDF Chat	Layer-transferred MoS2/GaN PN diodes	2015	Edwin W. Lee Choong Hee Lee Pran K. Paul Lu Ma William D. McCulloch Sriram Krishnamoorthy Yiying Wu Aaron R. Arehart Siddharth Rajan	1