High current density 2D/3D MoS<sub>2</sub>/GaN Esaki tunnel diodes
High current density 2D/3D MoS<sub>2</sub>/GaN Esaki tunnel diodes
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, …