Emily V. S. Hofmann

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All published works

Action	Title	Year	Authors
+	Room temperature donor incorporation for quantum devices: arsine on germanium	2022	Emily V. S. Hofmann Taylor J. Z. Stock Oliver Warschkow Rebecca Conybeare Neil J. Curson Steven R. Schofield
+ PDF Chat	Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy	2020	Taylor J. Z. Stock Oliver Warschkow Procopios Constantinou Juerong Li Sarah Fearn Eleanor Crane Emily V. S. Hofmann Alexander Kölker David R. McKenzie Steven R. Schofield
+	Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy	2019	Taylor J. Z. Stock Oliver Warschkow Procopios Constantinou Juerong Li Sarah Fearn Eleanor Crane Emily V. S. Hofmann Alexander Kölker David R. McKenzie Steven R. Schofield
+	Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy	2019	Taylor J. Z. Stock Oliver Warschkow Procopios Constantinou Juerong Li Sarah Fearn Eleanor Crane Emily V. S. Hofmann Alexander Kölker David R. McKenzie Steven R. Schofield

Common Coauthors

Coauthor	Papers Together
Neil J. Curson	4
Taylor J. Z. Stock	4
Steven R. Schofield	4
Oliver Warschkow	4
Procopios Constantinou	3
Sarah Fearn	3
Alexander Kölker	3
David R. McKenzie	3
Juerong Li	3
Eleanor Crane	2
Rebecca Conybeare	1
Eleanor Crane	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors	2015	David P. Franke Florian M. Hrubesch Markus Künzl Harry Becker Kohei M. Itoh M. Stutzmann Felix Hoehne L. Dreher Martin S. Brandt	1
+ PDF Chat	Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy	2004	L. Oberbeck Neil J. Curson Toby Hallam M. Y. Simmons G. Bilger Robert G. Clark	1
+ PDF Chat	Weak localization thickness measurements of Si:P delta-layers	2004	Dan Sullivan B. E. Kane Philip E. Thompson	1
+ PDF Chat	Atomically Precise Placement of Single Dopants in Si	2003	Steven R. Schofield Neil J. Curson M. Y. Simmons F. J. Rueß Toby Hallam L. Oberbeck Robert G. Clark	1
+ PDF Chat	STM characterization of the Si-P heterodimer	2004	Neil J. Curson Steven R. Schofield M. Y. Simmons L. Oberbeck Jeremy L. O’Brien Robert G. Clark	1
+ PDF Chat	Single-donor ionization energies in a nanoscale CMOS channel	2009	M. Pierre R. Wacquez X. Jehl M. Sanquer M. Vinet O. Cueto	1
+	Quantum computation with doped silicon cavities	2010	Miguel Abanto L. Davidovich Belita Koiller R. L. de Matos Filho	1
+ PDF Chat	Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon	2009	Andrea Morello Christopher C. Escott Hans Huebl L. H. Willems van Beveren Lloyd C. L. Hollenberg D.N. Jamieson Andrew S. Dzurak Robert G. Clark	1
+ PDF Chat	Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer	2002	L. Oberbeck Neil J. Curson M. Y. Simmons R. Brenner A. R. Hamilton Steven R. Schofield Robert G. Clark	1
+ PDF Chat	Simplifying quantum logic using higher-dimensional Hilbert spaces	2008	B. P. Lanyon Marco Barbieri M. P. Almeida Thomas Jennewein Timothy C. Ralph Kevin J. Resch Geoff J. Pryde Jeremy L. O’Brien Alexei Gilchrist A. G. White	1
+ PDF Chat	Coherent control of Rydberg states in silicon	2010	P. T. Greenland Stephen A. Lynch A. F. G. van der Meer B. N. Murdin C. R. Pidgeon Britta Redlich N. Q. Vinh G. Aeppli	1
+ PDF Chat	Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy	2013	Kitiphat Sinthiptharakoon Steven R. Schofield Philipp Studer Veronika Brázdová Cyrus F. Hirjibehedin David R. Bowler Neil J. Curson	1
+ PDF Chat	Quantum simulation of the Hubbard model with dopant atoms in silicon	2016	Joe Salfi Jan A. Mol Rajib Rahman Gerhard Klimeck M. Y. Simmons Lloyd C. L. Hollenberg Sven Rogge	1
+ PDF Chat	Multiple-Quantum Transitions and Charge-Induced Decoherence of Donor Nuclear Spins in Silicon	2017	David P. Franke Moritz Pflüger Kohei M. Itoh Martin S. Brandt	1
+	Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers	2018	Xiqiao Wang Joseph A. Hagmann Pradeep Namboodiri Jonathan Wyrick Kai Ming Li Roy Murray Alline F. Myers Frederick Misenkosen M. D. Stewart Curt A. Richter	1
+ PDF Chat	P-type $\delta$-doping with Diborane on Si(001) for STM Based Dopant Device Fabrication	2019	Tomáš Škereň S. A. Köster Bastien Douhard Claudia Fleischmann Andreas Fuhrer	1
+ PDF Chat	Spatially resolved resonant tunneling on single atoms in silicon	2015	B. Voisin Joe Salfi Juanita Bocquel Rajib Rahman Sven Rogge	1
+ PDF Chat	Addressable electron spin resonance using donors and donor molecules in silicon	2018	Samuel J. Hile Lukas Fricke Matthew House Eldad Peretz Chin‐Yi Chen Yu Wang Matthew A. Broome S. K. Gorman J. G. Keizer Rajib Rahman	1
+ PDF Chat	Spatially resolving valley quantum interference of a donor in silicon	2014	Joe Salfi Jan A. Mol Rajib Rahman Gerhard Klimeck M. Y. Simmons Lloyd C. L. Hollenberg Sven Rogge	1