Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Ting-Hsiang Hung, Siddharth Rajan

Type: Preprint

Publication Date: 2015-01-01

Citations: 0

DOI: https://doi.org/10.48550/arxiv.1511.04438

View Publication

Locations

arXiv (Cornell University) - View
DataCite API - View

Similar Works

Action	Title	Year	Authors
+	Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer	2015	Sanyam Bajaj Fatih Akyol Sriram Krishnamoorthy Ting-Hsiang Hung Siddharth Rajan
+ PDF Chat	Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering	2021	Guangnan Zhou Fanming Zeng Rongyu Gao Qing Wang Kai Cheng Guangrui Xia Hongyu Yu
+	Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering	2021	Guangnan Zhou Fanming Zeng Rongyu Gao Qing Wang Kai Cheng Guangrui Xia Hongyu Yu
+	Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate	2019	Yongle Qi Suzhen Wu
+ PDF Chat	Impacts of Backside Insulation on the Dynamic On-Resistance of Lateral p-GaN HEMTs-on-Si	2024	Yuxuan Wang Mao‐Chou Tai Ting‐Chang Chang Wei‐Chen Huang Zeyu Wan Simon Li Simon M. Sze Guangrui Xia
+ PDF Chat	Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates	2020	Guangnan Zhou Zeyu Wan Gaiying Yang Yang Jiang Robert Sokolovskij Hongyu Yu Guangrui Xia
+ PDF Chat	Density-dependent electron transport and precise modeling of GaN high electron mobility transistors	2015	Sanyam Bajaj Omor Shoron Pil Sung Park Sriram Krishnamoorthy Fatih Akyol Ting-Hsiang Hung Shahed Reza E.M. Chumbes Jacob B. Khurgin Siddharth Rajan
+ PDF Chat	Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with <i>V</i><sub>TH</sub> > 5V and On‐Current > 0.5 A mm<sup>−1</sup>	2019	Sandeep Kumar Sandeep Vura Surani Bin Dolmanan S. Tripathy Rangarajan Muralidharan Digbijoy N. Nath
+	Analytical Modeling of $I-V$ characteristics using 2D Poisson Equations in AlN/$\beta$-Ga$_2$O$_3$ HEMT	2021	Rajan Singh Trupti Ranjan Lenka Deepak Kumar Panda Hieu Pham Trung Nguyen Nour El Islam Boukortt Giovanni Crupi
+ PDF Chat	Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors	2020	Sandeep Kumar Surani Bin Dolmanan S. Tripathy Rangarajan Muralidharan Digbijoy N. Nath
+	Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas	2018	Samuel James Bader Reet Chaudhuri Kazuki Nomoto Austin Hickman Zhen Chen Han Wui Then David A. Muller Huili Grace Xing Debdeep Jena
+	Analytical Modeling of $I-V$ characteristics using 2D Poisson Equations in AlN/$β$-Ga$_2$O$_3$ HEMT	2021	Rajan Singh Trupti Ranjan Lenka Deepak Kumar Panda Hieu Pham Trung Nguyen Nour El Islam Boukortt Giovanni Crupi
+	Work Function Engineered Charge Plasma-Germanium Double Gate Tunnel Field Effect Transistor for Low-Power Switching Applications	2022	Sambhu P. Malik Ajeet K. Yadav Robin Khosla
+ PDF Chat	Estimation of background carrier concentration in fully depleted GaN films	2015	Hareesh Chandrasekar Manikant Singh Srinivasan Raghavan Navakanta Bhat
+ PDF Chat	Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs	2022	Giuseppe Greco Patrick Fiorenza Filippo Giannazzo Corrado Bongiorno Maurizio Moschetti Cettina Bottari Mario S. Alessandrino Ferdinando Iucolano Fabrizio Roccaforte
+ PDF Chat	Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	2021	Arkka Bhattacharyya Praneeth Ranga Saurav Roy Carl Peterson Fikadu Alema G. A. Seryogin A. Osinsky Sriram Krishnamoorthy
+ PDF Chat	Exploration of gate trench module for vertical GaN devices	2020	Maria Ruzzarin Karen Geens Matteo Borga H. Liang Shuzhen You Benoit Bakeroot Stefaan Decoutere Carlo De Santi A. Neviani Matteo Meneghini
+ PDF Chat	Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture	2016	David A. Deen David F. Storm D. S. Katzer R. Bass David J. Meyer
+	Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm	2019	Sandeep Kumar Sandeep Vura Surani Bin Dolmanan S. Tripathy R. Muralidharan Digbijoy N. Nath
+	Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm	2019	Sandeep Kumar Sandeep Vura Surani Bin Dolmanan S. Tripathy R. Muralidharan Digbijoy N. Nath

Works That Cite This (0)

Action	Title	Year	Authors

Works Cited by This (0)

Action	Title	Year	Authors

Simulation of Enhancement Mode GaN HEMTs with Threshold &gt; 5 V using P-type Buffer

Locations

Similar Works

Works That Cite This (0)

Works Cited by This (0)

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer