G. A. Seryogin

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All published works

Action	Title	Year	Authors
+ PDF Chat	Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	2021	Arkka Bhattacharyya Praneeth Ranga Saurav Roy Carl Peterson Fikadu Alema G. A. Seryogin A. Osinsky Sriram Krishnamoorthy

Common Coauthors

Coauthor	Papers Together
Sriram Krishnamoorthy	1
Carl Peterson	1
A. Osinsky	1
Arkka Bhattacharyya	1
Fikadu Alema	1
Saurav Roy	1
Praneeth Ranga	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Delta-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films and <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterostructures grown by metalorganic vapor-phase epitaxy	2020	Praneeth Ranga Arkka Bhattacharyya Ashwin K. Rishinaramangalam Yu Kee Ooi Michael A. Scarpulla Daniel Feezell Sriram Krishnamoorthy	1
+	Low temperature homoepitaxy of (010) <b> <i>β</i> </b>-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window	2020	Arkka Bhattacharyya Praneeth Ranga Saurav Roy Jonathan Ogle Luisa Whittaker‐Brooks Sriram Krishnamoorthy	1
+ PDF Chat	Delta-doped <b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> films with narrow FWHM grown by metalorganic vapor-phase epitaxy	2020	Praneeth Ranga Arkka Bhattacharyya Adrian Chmielewski Saurav Roy Nasim Alem Sriram Krishnamoorthy	1
+	Si-doped <i>β</i>-(Al<sub>0.26</sub>Ga<sub>0.74</sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by metalorganic vapor-phase epitaxy	2019	Praneeth Ranga Ashwin K. Rishinaramangalam Joel B. Varley Arkka Bhattacharyya Daniel Feezell Sriram Krishnamoorthy	1
+ PDF Chat	Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors	2020	Nidhin Kurian Kalarickal Zixuan Feng A F M Anhar Uddin Bhuiyan Zhanbo Xia Wyatt Moore Joe F. McGlone Aaron R. Arehart Steven A. Ringel Hongping Zhao Siddharth Rajan	1
+ PDF Chat	Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al <sub>x</sub> Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterostructure channels	2020	Praneeth Ranga Arkka Bhattacharyya Adrian Chmielewski Saurav Roy Rujun Sun Michael A. Scarpulla Nasim Alem Sriram Krishnamoorthy	1
+	N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium	2021	Praneeth Ranga Arkka Bhattacharyya Luisa Whittaker‐Brooks Michael A. Scarpulla Sriram Krishnamoorthy	1
+	High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$	2021	Saurav Roy Arkka Bhattacharyya Praneeth Ranga Heather Splawn Jacob H. Leach Sriram Krishnamoorthy	1
+	High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup>	2021	Saurav Roy Arkka Bhattacharyya Praneeth Ranga Heather Splawn Jacob H. Leach Sriram Krishnamoorthy	1