Hsien‐Lien Huang

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All published works
Action Title Year Authors
+ PDF Chat Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$\beta$-Ga$_2$O$_3$ and Al$_2$O$_3$/$\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs 2025 A F M Anhar Uddin Bhuiyan
Lingyu Meng
Dong Su Yu
Sushovan Dhara
Hsien‐Lien Huang
Vijay Gopal Thirupakuzi Vangipuram
Jinwoo Hwang
Siddharth Rajan
Hongping Zhao
+ PDF Chat Ultra-Wide Band Gap Ga<sub>2</sub>O<sub>3</sub>-on-SiC MOSFETs 2023 Yiwen Song
Arkka Bhattacharyya
Anwarul Karim
Daniel Shoemaker
Hsien‐Lien Huang
Saurav Roy
Craig D. McGray
Jacob H. Leach
Jinwoo Hwang
Sriram Krishnamoorthy
+ Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates 2023 A F M Anhar Uddin Bhuiyan
Lingyu Meng
Hsien‐Lien Huang
Jith Sarker
Chris Chae
Baishakhi Mazumder
Jinwoo Hwang
Hongping Zhao
+ MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates 2022 A F M Anhar Uddin Bhuiyan
Zixuan Feng
Hsien‐Lien Huang
Lingyu Meng
Jinwoo Hwang
Hongping Zhao
+ In-situ MOCVD Growth and Band Offsets of Al$_2$O$_3$ Dielectric on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ thin films 2022 A F M Anhar Uddin Bhuiyan
Lingyu Meng
Hsien‐Lien Huang
Jinwoo Hwang
Hongping Zhao
+ Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs 2022 Yiwen Song
Arkka Bhattacharyya
Anwarul Karim
Daniel P. Shoemaker
Hsien‐Lien Huang
Saurav Roy
Craig D. McGray
Jacob H. Leach
Jinwoo Hwang
Sriram Krishnamoorthy
+ PDF Chat Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> 2019 Jared M. Johnson
Zhen Chen
Joel B. Varley
Christine M. Jackson
Esmat Farzana
Zeng Zhang
Aaron R. Arehart
Hsien‐Lien Huang
Arda Genç
Steven A. Ringel
Common Coauthors
Commonly Cited References
Action Title Year Authors # of times referenced
+ PDF Chat Anisotropic thermal conductivity in single crystal β-gallium oxide 2015 Zhi Guo
Amit Verma
Xufei Wu
Fangyuan Sun
Austin Hickman
Takekazu Masui
Akito Kuramata
Masataka Higashiwaki
Debdeep Jena
Tengfei Luo
1
+ PDF Chat Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy 2016 Jared M. Johnson
Soohyun Im
Wolfgang Windl
Jinwoo Hwang
1
+ PDF Chat Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices 2020 Zhe Cheng
Fengwen Mu
Luke Yates
Tadatomo Suga
Samuel Graham
1
+ PDF Chat Computational identification of Ga-vacancy related electron paramagnetic resonance centers in <i>β</i>-Ga2O3 2019 Dmitry Skachkov
Walter R. L. Lambrecht
H. J. von Bardeleben
U. Gerstmann
Quốc Duy Hồ
Péter Deák
1
+ PDF Chat Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors 2020 Nidhin Kurian Kalarickal
Zixuan Feng
A F M Anhar Uddin Bhuiyan
Zhanbo Xia
Wyatt Moore
Joe F. McGlone
Aaron R. Arehart
Steven A. Ringel
Hongping Zhao
Siddharth Rajan
1
+ Donors and deep acceptors in β-Ga2O3 2018 Adam T. Neal
Shin Mou
Subrina Rafique
Hongping Zhao
Elaheh Ahmadi
James S. Speck
K. T. Stevens
J. D. Blevins
Darren B. Thomson
Neil Moser
1
+ PDF Chat Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² 2021 Arkka Bhattacharyya
Praneeth Ranga
Saurav Roy
Carl Peterson
Fikadu Alema
G. A. Seryogin
A. Osinsky
Sriram Krishnamoorthy
1
+ PDF Chat 4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup> 2022 Arkka Bhattacharyya
Shivam Sharma
Fikadu Alema
Praneeth Ranga
Saurav Roy
Carl Peterson
Geroge Seryogin
A. Osinsky
Uttam Singisetti
Sriram Krishnamoorthy
1