Suyogya Karki

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All published works

Action	Title	Year	Authors
+	Low voltage local strain enhanced switching of magnetic tunnel junctions	2023	Suyogya Karki Jaesuk Kwon J. E. Davies Raisa Fabiha Vivian Rogers Thomas M. Leonard Supriyo Bandyopadhyay Jean Anne C. Incorvia
+ PDF Chat	All-Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe<sub>2</sub> Transistors	2022	Xintong Li Zhida Liu Yihan Liu Suyogya Karki Xiaoqin Li Deji Akinwande Jean Anne C. Incorvia
+	All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors	2022	Xintong Li Zhida Liu Yihan Liu Suyogya Karki Xiaoqin Li Deji Akinwande Jean Anne C. Incorvia
+	Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles	2020	Suyogya Karki Vivian Rogers Priyamvada Jadaun Daniel S. Marshall Jean Anne C. Incorvia

Common Coauthors

Coauthor	Papers Together
Jean Anne C. Incorvia	4
Vivian Rogers	2
Zhida Liu	2
Deji Akinwande	2
Xiaoqin Li	2
Priyamvada Jadaun	1
J. E. Davies	1
Daniel S. Marshall	1
Yihan Liu	1
Yihan Liu	1
Jaesuk Kwon	1
Xintong Li	1
Xintong Li	1
Thomas M. Leonard	1
Raisa Fabiha	1
Supriyo Bandyopadhyay	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Neutral-current Hall effects in disordered graphene	2015	Yilin Wang Xinghan Cai Janice Reutt‐Robey Michael S. Fuhrer	1
+ PDF Chat	Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene	2015	Yuya Shimazaki Michihisa Yamamoto Ivan Borzenets Kenji Watanabe Takashi Taniguchi Seigo Tarucha	1
+ PDF Chat	Electrical control of the valley Hall effect in bilayer MoS2 transistors	2016	Jieun Lee Kin Fai Mak Jie Shan	1
+ PDF Chat	High-Mobility Holes in Dual-Gated WSe<sub>2</sub> Field-Effect Transistors	2015	Hema C. P. Movva Amritesh Rai Sangwoo Kang Kyounghwan Kim Babak Fallahazad Takashi Taniguchi Kenji Watanabe Emanuel Tutuc Sanjay K. Banerjee	1
+ PDF Chat	High-mobility field-effect transistors based on transition metal dichalcogenides	2004	Vitaly Podzorov M. E. Gershenson Ch. Kloc Roswitha Zeis E. Bücher	1
+ PDF Chat	Valley-dependent optoelectronics from inversion symmetry breaking	2008	Wang Yao Di Xiao Qian Niu	1
+ PDF Chat	Coupled Spin and Valley Physics in Monolayers of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>and Other Group-VI Dichalcogenides	2012	Di Xiao Gui‐Bin Liu Wanxiang Feng Xiaodong Xu Wang Yao	1
+ PDF Chat	Large spin splitting in the conduction band of transition metal dichalcogenide monolayers	2013	K. Kośmider J. W. González J. Fernández‐Rossier	1
+ PDF Chat	Valley filter and valley valve in graphene	2007	Adam Rycerz J. Tworzydło C. W. J. Beenakker	1
+ PDF Chat	The valley Hall effect in MoS <sub>2</sub> transistors	2014	Kin Fai Mak Kathryn L. McGill Jiwoong Park Paul L. McEuen	1
+ PDF Chat	High Mobility WSe<sub>2</sub> p<i>-</i> and n<i>-</i>Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts	2014	Hsun‐Jen Chuang Xuebin Tan N. Ghimire Meeghage Madusanka Perera Bhim Chamlagain Mark Ming‐Cheng Cheng Jiaqiang Yan David Mandrus David Tománek Zhixian Zhou	1
+ PDF Chat	Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study	2012	Wanxiang Feng Yugui Yao Wenguang Zhu Jin-Jian Zhou Wang Yao Di Xiao	1
+ PDF Chat	Valley polarization in MoS2 monolayers by optical pumping	2012	Hualing Zeng Junfeng Dai Wang Yao Di Xiao Xiaodong Cui	1
+ PDF Chat	Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides	2013	Wen-Yu Shan Hai-Zhou Lu Di Xiao	1
+ PDF Chat	Electronic spin transport and spin precession in single graphene layers at room temperature	2007	N. Tombros C. Józsa M. Popinciuc Harry T. Jonkman B. J. van Wees	1
+ PDF Chat	Control of valley polarization in monolayer MoS2 by optical helicity	2012	Kin Fai Mak Keliang He Jie Shan Tony F. Heinz	1
+ PDF Chat	Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices	2016	Marc Drögeler Christopher Franzen Frank Volmer Tobias Pohlmann Luca Banszerus Maik Wolter Kenji Watanabe Takashi Taniguchi Christoph Stampfer Bernd Beschoten	1
+ PDF Chat	Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/…	2014	Yilei Li Alexey Chernikov Xian Zhang Albert F. Rigosi Heather M. Hill Arend M. van der Zande Daniel Chenet En-Min Shih James Hone Tony F. Heinz	1
+ PDF Chat	Spin- and valley-polarized transport across line defects in monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>	2016	Artem Pulkin Oleg V. Yazyev	1
+ PDF Chat	Spin Hall Effect and Origins of Nonlocal Resistance in Adatom-Decorated Graphene	2016	Dinh Van Tuan Juan M. Marmolejo‐Tejada Xavier Waintal Branislav Nikolić Sergio O. Valenzuela Stephan Roche	1
+ PDF Chat	Observation of ultralong valley lifetime in WSe <sub>2</sub> /MoS <sub>2</sub> heterostructures	2017	Jonghwan Kim Chenhao Jin Bin Chen Hui Cai Tao Zhao Puiyee Lee Salman Kahn Kenji Watanabe Takashi Taniguchi Sefaattin Tongay	1
+ PDF Chat	Gate-Controlled Spin-Valley Locking of Resident Carriers in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> Monolayers	2017	P. Dey Luyi Yang Cédric Robert Gang Wang B. Urbaszek X. Marie S. A. Crooker	1
+ PDF Chat	Valley magnetoelectricity in single-layer MoS2	2017	Jieun Lee Zefang Wang Hongchao Xie Kin Fai Mak Jie Shan	1
+ PDF Chat	Room-Temperature Spin Hall Effect in Graphene/MoS<sub>2</sub> van der Waals Heterostructures	2019	C. K. Safeer Josep Ingla‐Aynés Franz Herling José H. García Marc Vila Nerea Ontoso M. Reyes Calvo Stephan Roche Luis E. Hueso Fèlix Casanova	1
+ PDF Chat	Experimental observation of coupled valley and spin Hall effect in p‐doped WSe<sub>2</sub> devices	2020	Terry Y.T. Hung Avinash Rustagi Shengjiao Zhang Pramey Upadhyaya Zhihong Chen	1
+ PDF Chat	Graphene spintronics	2014	Wei Han Roland Kawakami Martin Gmitra Jaroslav Fabian	1
+ PDF Chat	Unveiling Valley Lifetimes of Free Charge Carriers in Monolayer WSe<sub>2</sub>	2020	Manfred Ersfeld Frank Volmer Lars Rathmann Luca Kotewitz Maximilian Heithoff Mark Lohmann Bowen Yang Kenji Watanabe Takashi Taniguchi Ludwig Bartels	1
+	Intrinsic valley Hall transport in atomically thin MoS2	2019	Zefei Wu Benjamin T. Zhou Xiangbin Cai Patrick Cheung Gui‐Bin Liu Meizhen Huang Jiangxiazi Lin Tianyi Han Liheng An Yuanwei Wang	1