Pil Sung Park

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All published works
Action Title Year Authors
+ PDF Chat Density-dependent electron transport and precise modeling of GaN high electron mobility transistors 2015 Sanyam Bajaj
Omor Shoron
Pil Sung Park
Sriram Krishnamoorthy
Fatih Akyol
Ting-Hsiang Hung
Shahed Reza
E.M. Chumbes
Jacob B. Khurgin
Siddharth Rajan
+ PDF Chat Large area single crystal (0001) oriented MoS2 2013 Masihhur R. Laskar
Lu Ma
Santhakumar Kannappan
Pil Sung Park
Sriram Krishnamoorthy
Digbijoy N. Nath
Wu Lu
Yiying Wu
Siddharth Rajan
+ PDF Chat GdN Nanoisland-Based GaN Tunnel Junctions 2013 Sriram Krishnamoorthy
Thomas F. Kent
Jing Yang
Pil Sung Park
Roberto C. Myers
Siddharth Rajan
+ PDF Chat Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion 2013 Pil Sung Park
K. M. Reddy
Digbijoy N. Nath
Zhichao Yang
Nitin P. Padture
Siddharth Rajan
+ PDF Chat Low resistance GaN/InGaN/GaN tunnel junctions 2013 Sriram Krishnamoorthy
Fatih Akyol
Pil Sung Park
Siddharth Rajan
+ Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion 2013 Pil Sung Park
K. M. Reddy
Digbijoy N. Nath
Zhichao Yang
Nitin P. Padture
Siddharth Rajan
+ Electrical Properties of Graphene/AlGaN/GaN Heterostructures 2013 Pil Sung Park
K. M. Reddy
Digbijoy N. Nath
Nitin P. Padture
Siddharth Rajan
+ Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion 2013 Pil Sung Park
K. M. Reddy
Digbijoy N. Nath
Zhichao Yang
Nitin P. Padture
Siddharth Rajan
+ GdN nanoislands as midgap states for low resistance GaN tunnel junctions 2012 Sriram Krishnamoorthy
Thomas F. Kent
Jing Yang
Pil Sung Park
Roberto C. Myers
Siddharth Rajan
+ Efficient GaN tunnel junctions using embedded GdN nanoislands 2012 Sriram Krishnamoorthy
Jing Yang
Pil Sung Park
Roberto C. Myers
Siddharth Rajan
+ PDF Chat Demonstration of forward inter-band tunneling in GaN by polarization engineering 2011 Sriram Krishnamoorthy
Pil Sung Park
Siddharth Rajan
+ PDF Chat Polarization-engineered GaN/InGaN/GaN tunnel diodes 2010 Sriram Krishnamoorthy
Digbijoy N. Nath
Fatih Akyol
Pil Sung Park
Michele Esposto
Siddharth Rajan
Common Coauthors
Commonly Cited References
Action Title Year Authors # of times referenced
+ PDF Chat Spontaneous polarization and piezoelectric constants of III-V nitrides 1997 Fabio Bernardini
Vincenzo Fiorentini
David Vanderbilt
3
+ PDF Chat Polarization-engineered GaN/InGaN/GaN tunnel diodes 2010 Sriram Krishnamoorthy
Digbijoy N. Nath
Fatih Akyol
Pil Sung Park
Michele Esposto
Siddharth Rajan
3
+ PDF Chat Electric Field Effect in Atomically Thin Carbon Films 2004 Kostya S. Novoselov
A. K. Geǐm
С. В. Морозов
Da Jiang
Y. Zhang
S. V. Dubonos
I. V. Grigorieva
А. А. Firsov
2
+ PDF Chat Demonstration of forward inter-band tunneling in GaN by polarization engineering 2011 Sriram Krishnamoorthy
Pil Sung Park
Siddharth Rajan
2
+ PDF Chat GdN Nanoisland-Based GaN Tunnel Junctions 2013 Sriram Krishnamoorthy
Thomas F. Kent
Jing Yang
Pil Sung Park
Roberto C. Myers
Siddharth Rajan
1
+ PDF Chat Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition 2012 Yi‐Hsien Lee
Xinquan Zhang
Wenjing Zhang
Mu‐Tung Chang
Cheng‐Te Lin
Kai‐Di Chang
Ya-Chu Yu
Jacob Tse‐Wei Wang
Chia‐Seng Chang
Lain‐Jong Li
1
+ PDF Chat Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets 2010 Daeha Joung
Anindarupa Chunder
Lei Zhai
Saiful I. Khondaker
1
+ Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils 2009 Xuesong Li
Weiwei Cai
Jinho An
Seyoung Kim
Junghyo Nah
Dongxing Yang
Richard D. Piner
Aruna Velamakanni
Inhwa Jung
Emanuel Tutuc
1
+ PDF Chat Roll-to-roll production of 30-inch graphene films for transparent electrodes 2010 Sukang Bae
Hyeongkeun Kim
Youngbin Lee
Xiangfan Xu
Jae-Sung Park
Yi Zheng
Jayakumar Balakrishnan
Lei Tian
Hye Ri Kim
Young Il Song
1
+ PDF Chat $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric 2012 Han Liu
Peide D. Ye
1
+ PDF Chat Energy Band-Gap Engineering of Graphene Nanoribbons 2007 Melinda Han
Barbaros Özyilmaz
Yuanbo Zhang
Philip Kim
1
+ PDF Chat Two-dimensional gas of massless Dirac fermions in graphene 2005 Kostya S. Novoselov
A. K. Geǐm
С. В. Морозов
Da Jiang
M. I. Katsnelson
I. V. Grigorieva
S. V. Dubonos
А. А. Firsov
1
+ PDF Chat Room-Temperature Quantum Hall Effect in Graphene 2007 Kostya S. Novoselov
Zhewei Jiang
Y. Zhang
С. В. Морозов
H. L. Störmer
U. Zeitler
J. C. Maan
G. S. Boebinger
Philip Kim
A. K. Geǐm
1
+ PDF Chat Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate 2012 Yongjie Zhan
Zheng Liu
Sina Najmaei
Pulickel M. Ajayan
Jun Lou
1
+ PDF Chat Epitaxial ferromagnetic nanoislands of cubic GdN in hexagonal GaN 2012 Thomas F. Kent
Jing Yang
Limei Yang
Michael J. Mills
Roberto C. Myers
1
+ PDF Chat Electroluminescence in Single Layer MoS<sub>2</sub> 2013 Ravi S. Sundaram
Michael Engel
Antonio Lombardo
Ralph Krupke
Andrea C. Ferrari
Phaedon Avouris
M. Steiner
1
+ PDF Chat Anomalous Lattice Vibrations of Single- and Few-Layer MoS<sub>2</sub> 2010 Changgu Lee
Hugen Yan
Louis E. Brus
Tony F. Heinz
James Hone
Sunmin Ryu
1
+ PDF Chat Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2 2013 Nihar Pradhan
Daniel Rhodes
Q. Zhang
Saikat Talapatra
Mauricio Terrones
Pulickel M. Ajayan
Luis Balicas
1
+ PDF Chat Low resistance GaN/InGaN/GaN tunnel junctions 2013 Sriram Krishnamoorthy
Fatih Akyol
Pil Sung Park
Siddharth Rajan
1
+ PDF Chat High quality, transferrable graphene grown on single crystal Cu(111) thin films on basal-plane sapphire 2011 K. M. Reddy
Andrew D. Gledhill
Chun‐Hu Chen
Julie M. Drexler
Nitin P. Padture
1
+ PDF Chat Laser-Thinning of MoS<sub>2</sub>: On Demand Generation of a Single-Layer Semiconductor 2012 Andrés Castellanos-Gómez
Maria Barkelid
A. Goossens
V. E. Calado
Herre S. J. van der Zant
Gary A. Steele
1
+ PDF Chat Integrated Circuits Based on Bilayer MoS<sub>2</sub> Transistors 2012 Han Wang
Lili Yu
Yi‐Hsien Lee
Yumeng Shi
Allen Hsu
Matthew L. Chin
Lain‐Jong Li
Madan Dubey
Jing Kong
Tomás Palacios
1
+ PDF Chat Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design 2011 Debdeep Jena
John Simon
Albert Wang
Yu Cao
Kevin Goodman
Jai Verma
Satyaki Ganguly
Guowang Li
Kamal Karda
Vladimir Protasenko
1
+ PDF Chat Effect of Optical Phonon Scattering on the Performance of GaN Transistors 2012 Tian Fang
Ronghua Wang
Huili Grace Xing
Siddharth Rajan
Debdeep Jena
1