Roy Murray

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All published works

Action	Title	Year	Authors
+ PDF Chat	Long-term drift of Si-MOS quantum dots with intentional donor implants	2019	M. S. Rudolph Bahman Sarabi Roy Murray Malcolm S. Carroll Neil M. Zimmerman
+	Long-term drift of Si-MOS quantum dots with intentional donor implants	2018	Martin Rudolph Bahman Sarabi Roy Murray Malcolm S. Carrol Neil M. Zimmerman
+	Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers	2018	Xiqiao Wang Joseph A. Hagmann Pradeep Namboodiri Jonathan Wyrick Kai Ming Li Roy Murray Alline F. Myers Frederick Misenkosen M. D. Stewart Curt A. Richter
+	Long-term drift of Si-MOS quantum dots with intentional donor implants	2018	Martin Rudolph Bahman Sarabi Roy Murray Malcolm S. Carrol Neil M. Zimmerman
+	Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers	2017	Xiqiao Wang Joseph A. Hagmann Pradeep Namboodiri Jonathan Wyrick Kai Li Roy Murray Alline F. Myers Frederick Misenkosen M. D. Stewart Curt A. Richter

Common Coauthors

Coauthor	Papers Together
Bahman Sarabi	3
Neil M. Zimmerman	3
Pradeep Namboodiri	2
Alline F. Myers	2
Jonathan Wyrick	2
M. D. Stewart	2
Richard M. Silver	2
Curt A. Richter	2
Xiqiao Wang	2
Frederick Misenkosen	2
Joseph A. Hagmann	2
Malcolm S. Carrol	2
Kai Ming Li	1
Malcolm S. Carroll	1
Martin Rudolph	1
M. S. Rudolph	1
Martin Rudolph	1
Kai Li	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+ PDF Chat	Atomically Precise Placement of Single Dopants in Si	2003	Steven R. Schofield Neil J. Curson M. Y. Simmons F. J. Rueß Toby Hallam L. Oberbeck Robert G. Clark	2
+ PDF Chat	Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas	2013	Jill A. Miwa Philip Hofmann M. Y. Simmons Justin W. Wells	2
+ PDF Chat	Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy	2004	L. Oberbeck Neil J. Curson Toby Hallam M. Y. Simmons G. Bilger Robert G. Clark	2
+ PDF Chat	Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon	2017	Mykhailo V. Klymenko Sven Rogge F. Remacle	2
+ PDF Chat	Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>δ</mml:mi></mml:mrow></mml:math>layers	2011	Saquib Shamim Suddhasatta Mahapatra Craig Polley M. Y. Simmons Arindam Ghosh	2
+ PDF Chat	Single-charge detection by an atomic precision tunnel junction	2014	Matthew House Eldad Peretz J. G. Keizer Samuel J. Hile M. Y. Simmons	2
+ PDF Chat	Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer	2002	L. Oberbeck Neil J. Curson M. Y. Simmons R. Brenner A. R. Hamilton Steven R. Schofield Robert G. Clark	2
+ PDF Chat	Silicon quantum electronics	2013	Floris A. Zwanenburg Andrew S. Dzurak Andrea Morello M. Y. Simmons Lloyd C. L. Hollenberg Gerhard Klimeck Sven Rogge S. N. Coppersmith M. A. Eriksson	2
+ PDF Chat	Spatial Resolution in Atom Probe Tomography	2010	Baptiste Gault Michael P. Moody Frédéric De Geuser A. La Fontaine Leigh T. Stephenson Daniel Haley Simon P. Ringer	2
+ PDF Chat	Spatial metrology of dopants in silicon with exact lattice site precision	2016	Muhammad Usman Juanita Bocquel Joe Salfi B. Voisin Archana Tankasala Rajib Rahman M. Y. Simmons Sven Rogge Lloyd C. L. Hollenberg	2
+	Extracting inter-dot tunnel couplings between few donor quantum dots in silicon	2016	S. K. Gorman Matthew A. Broome J. G. Keizer Thomas F. Watson Samuel J. Hile William Baker M. Y. Simmons	1
+ PDF Chat	Coherent coupling between a quantum dot and a donor in silicon	2017	Patrick Harvey-Collard N. Tobias Jacobson Martin Rudolph Jason Dominguez Gregory A. Ten Eyck Joel R. Wendt Tammy Pluym John King Gamble Michael Lilly Michel Pioro-Ladrière	1
+ PDF Chat	Charge offset stability in Si single electron devices with Al gates	2014	Neil M. Zimmerman Chih Hwan Yang Nai Shyan Lai Wee Han Lim Andrew S. Dzurak	1
+ PDF Chat	Effect of device design on charge offset drift in Si/SiO2 single electron devices	2018	Binhui Hu Erick D. Ochoa Daniel S. Sanchez Justin K. Perron Neil M. Zimmerman M. D. Stewart	1
+ PDF Chat	Decoherence from ensembles of two-level fluctuators	2006	Josef Schriefl Yuriy Makhlin Alexander Shnirman Gerd Schön	1
+ PDF Chat	High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism	2018	Patrick Harvey-Collard Benjamin D’Anjou Martin Rudolph N. Tobias Jacobson Jason Dominguez Gregory A. Ten Eyck Joel R. Wendt Tammy Pluym Michael Lilly W. A. Coish	1
+ PDF Chat	Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET	2009	Lisa A Tracy E. H. Hwang Kevin Eng Gregory A. Ten Eyck Eric Nordberg K. D. Childs Malcolm S. Carroll Michael Lilly S. Das Sarma	1
+	Coupling MOS quantum dot and phosphorous donor qubit systems	2016	M. S. Rudolph Patrick Harvey-Collard Ryan Michael Jock Tobias Jacobson J. R. Wendt Tammy Pluym J. Domínguez G. Ten-Eyck Ronald P. Manginell Michael Lilly	1
+ PDF Chat	Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit	2013	Oliver Dial Michael Shulman Shannon P. Harvey Hendrik Bluhm V. Umansky Amir Yacoby	1
+ PDF Chat	Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces	2004	Jeong‐Young Ji T. C. Shen	1
+ PDF Chat	Singlet-triplet decoherence due to nuclear spins in a double quantum dot	2005	W. A. Coish Daniel Loss	1
+ PDF Chat	Single ion implantation for single donor devices using Geiger mode detectors	2010	Edward S. Bielejec John Seamons Malcolm S. Carroll	1
+ PDF Chat	Storing quantum information for 30 seconds in a nanoelectronic device	2014	Juha T. Muhonen Juan Pablo Dehollain Arne Laucht Fay E. Hudson Rachpon Kalra T. Sekiguchi Kohei M. Itoh D.N. Jamieson J. C. McCallum Andrew S. Dzurak	1
+ PDF Chat	Influence of encapsulation temperature on Ge:P<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-doped layers	2009	Giordano Scappucci Giovanni Capellini M. Y. Simmons	1
+ PDF Chat	Electronic transport in two-dimensional Si:P<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-doped layers	2013	E. H. Hwang S. Das Sarma	1
+ PDF Chat	Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot	2004	L. DiCarlo H. J. Lynch A. C. Johnson Lilian Childress K. Crockett C. M. Marcus M. Hanson A. C. Gossard	1
+ PDF Chat	Microscopic models for charge-noise-induced dephasing of solid-state qubits	2015	F. Beaudoin W. A. Coish	1