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Influence of encapsulation temperature on Ge:P<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-doped layers
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the …