Min Joo Park

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All published works

Action	Title	Year	Authors
+	Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods	2014	Chentian Shi Chunfeng Zhang Fan Yang Min Joo Park Joon Seop Kwak Sukkoo Jung Yoon-Ho Choi Xiaoyong Wang Min Xiao
+ PDF Chat	Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells	2013	Fan Yang Chunfeng Zhang Chentian Shi Min Joo Park Joon Seop Kwak Sukkoo Jung Yoon-Ho Choi Xuewei Wu Xiaoyong Wang Min Xiao
+	Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods	2012	Bin Jiang Chunfeng Zhang Xiaoyong Wang Fei Xue Min Joo Park Joon Seop Kwak Min Xiao
+	Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods	2011	Bin Jiang Chunfeng Zhang Xiaoyong Wang Fei Xue Min Joo Park Joon Seop Kwak Min Xiao

Common Coauthors

Coauthor	Papers Together
Chunfeng Zhang	4
Joon Seop Kwak	4
Xiaoyong Wang	4
Min Xiao	4
Fan Yang	2
Sukkoo Jung	2
Bin Jiang	2
Chentian Shi	2
Yoon-Ho Choi	2
Fei Xue	2
Xuewei Wu	1

Commonly Cited References

Action	Title	Year	Authors	# of times referenced
+	Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods	2011	Bin Jiang Chunfeng Zhang Xiaoyong Wang Fei Xue Min Joo Park Joon Seop Kwak Min Xiao	2
+ PDF Chat	Carrier recombination dynamics in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>In</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mtext>N</mml:mtext><mml:mo>/</mml:mo><mml:mtext>GaN</mml:mtext></mml:mrow></mml:math>multiple quantum wells	2010	Colin-N. Brosseau Mathieu Perrin Carlos Silva R. Leonelli	2
+ PDF Chat	Carrier localization mechanisms in In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>N/GaN quantum wells	2011	Duncan Watson‐Parris M. J. Godfrey P. Dawson Rachel A. Oliver M. J. Galtrey M. J. Kappers C. J. Humphreys	2
+ PDF Chat	Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop	2013	Justin Iveland Lucio Martinelli Jacques Peretti James S. Speck Claude Weisbuch	2
+ PDF Chat	Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure	2011	Jonas Lähnemann O. Brandt Carsten Pfüller Timur Flissikowski U. Jahn E. Luna M. Hanke M. Knelangen A. Trampert H. T. Grahn	2
+	Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods	2012	Bin Jiang Chunfeng Zhang Xiaoyong Wang Fei Xue Min Joo Park Joon Seop Kwak Min Xiao	2
+ PDF Chat	Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells	2013	Fan Yang Chunfeng Zhang Chentian Shi Min Joo Park Joon Seop Kwak Sukkoo Jung Yoon-Ho Choi Xuewei Wu Xiaoyong Wang Min Xiao	1