Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells
Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells
We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well …