High-Fidelity TiN Processing Modes for Multigate Ge-Based Quantum Devices
High-Fidelity TiN Processing Modes for Multigate Ge-Based Quantum Devices
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to realize a larger number of gate-defined qubits, multiples of gates with ultimately high resolution …