Tunable cavity coupling to spin defects in
4H-silicon-carbide-on-insulator platform
Tunable cavity coupling to spin defects in
4H-silicon-carbide-on-insulator platform
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI (silicon-carbide-on-insulator) makes it an ideal platform for integrated quantum photonic devices and circuits. While micro-ring cavities have been …