Achieving low contact resistance through copper-intercalated bilayer
MoS$_2$
Achieving low contact resistance through copper-intercalated bilayer
MoS$_2$
The high contact resistance between MoS$_2$ and metals hinders its potential as an ideal solution for overcoming the short channel effect in silicon-based FETs at sub-3nm scales. We theoretically designed a MoS$_2$-based transistor, featuring bilayer MoS$_2$ connected to Cu-intercalated bilayer MoS$_2$ electrodes. At 0.6 V, contact resistance is 16.7 $\Omega …