Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in
Ultra-Thin Film Silicon
Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in
Ultra-Thin Film Silicon
The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material properties and leads to desired or undesired effects, especially in the active part …